公开(公告)号：US20230369279A1

公开(公告)日：2023-11-16

申请号：US18144347

申请日：2023-05-08

Applicant: STMicroelectronics S.r.l.

Inventor： Thomas GOTTARDI ,  Nicoletta MODARELLI ,  Guendalina CATALANO

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/40 ,  H01L23/49582 ,  H01L24/32 ,  H01L24/37 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L23/49513 ,  H01L2224/32245 ,  H01L2224/37013 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/73263 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/92246 ,  H01L2924/01029 ,  H01L2924/01047

Abstract: A semiconductor die is attached on a die-attachment portion of a planar substrate. A planar electrically conductive clip in mounted onto the semiconductor die. The semiconductor die is sandwiched between the die-attachment portion and the electrically conductive clip. A distal portion of the electrically conductive clip extending away from the semiconductor die is spaced from an electrically conductive lead of the planar substrate by a gap. This gap is filled by a mass of gap-filling material transferred to an upper surface of the electrically conductive lead via Laser Induced Forward Transfer (LIFT) processing. A mass of the gap-filling material is sized and dimensioned to substantially fill the gap.