公开(公告)号：US20240290757A1

公开(公告)日：2024-08-29

申请号：US18174837

申请日：2023-02-27

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Atapol PRAJUCKAMOL ,  Chee Hiong CHEW ,  Yusheng LIN

IPC分类号： H01L25/07 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00

CPC分类号： H01L25/071 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/538 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L24/95 ,  H01L25/50 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/38 ,  H01L2224/40101 ,  H01L2224/40105 ,  H01L2224/40139 ,  H01L2224/40147 ,  H01L2224/4103 ,  H01L2224/4112 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8493

摘要： A transistor configured for higher power can be constructed using multiple transistor dies coupled in parallel. This approach of distributing power and heat over multiple transistor dies can allow each transistor die to be made smaller, which can be helpful in improving yield. This is especially true for emerging technologies, such as silicon carbide (SiC). Power modules for power conversion may require a plurality of these multi-die transistors in a package. A package that accommodates the numerous connections required for a multi-die power module is disclosed. The package utilizes a lead frame to provide a three-dimensional sandwich structure in which multiple dies are positioned between two direct bonded copper (DBC) substrates.

公开(公告)号：US20240282678A1

公开(公告)日：2024-08-22

申请号：US18651064

申请日：2024-04-30

申请人： Rohm Co., Ltd.

发明人： Ryotaro KAKIZAKI ,  Yasumasa KASUYA

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/49541 ,  H01L23/293 ,  H01L23/3142 ,  H01L23/49513 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L24/37 ,  H01L24/45 ,  H01L2224/37124 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73271 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A semiconductor device includes: a semiconductor element; a first lead including a die pad portion and a first terminal portion; and a sealing resin. A first lead reverse surface is exposed from a second resin surface and spaced apart from a third resin surface in a first direction. The first terminal portion includes a first portion and a second portion. Only one set of the first portion passes through the third resin surface. The first portion is spaced apart from the second resin surface in a z direction. The second portion is located on a first side in the z direction relative to the first portion and used for mounting.

公开(公告)号：US20240222311A1

公开(公告)日：2024-07-04

申请号：US18605500

申请日：2024-03-14

申请人： FUJI ELECTRIC CO., LTD.

发明人： Ryoichi KATO ,  Yuichiro HINATA ,  Yuma MURATA

IPC分类号： H01L23/00 ,  H01L23/538 ,  H01L25/07

CPC分类号： H01L24/40 ,  H01L23/5386 ,  H01L24/37 ,  H01L24/73 ,  H01L25/072 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37655 ,  H01L2224/37663 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73221 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/0132 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A semiconductor device including: first and second conductive portions having a gap therebetween; connection wiring including first and second bonding portions respectively bonded to front surfaces of the first and second conductive portions, and a wiring portion straddling the gap and connecting the first and second bonding portions; and a wire bonded to the wiring portion. The wiring portion includes: a vertical portion extending, from a lower end to an upper end thereof, perpendicularly to the first conductive portion, the lower end being connected to the first bonding portion; a parallel portion extending in parallel to the first and second conductive portions from the upper end of the vertical portion, the parallel portion having, on a front surface thereof, a wire bonding portion to which one end of the wire is bonded; and an inclined portion extending inclinedly from the parallel portion toward the second bonding portion.

公开(公告)号：US20240222225A1

公开(公告)日：2024-07-04

申请号：US18347313

申请日：2023-07-05

申请人： Hyundai Motor Company ,  Kia Corporation

发明人： Suk Hyun Lim ,  Hyun Koo Lee ,  Sang Hun Lee ,  Se Heun Kwon ,  Ki Young Jang ,  Jun Hee Park

IPC分类号： H01L23/473 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L23/473 ,  H01L24/37 ,  H01L24/40 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/37013 ,  H01L2224/40137 ,  H01L2224/40175

摘要： An embodiment liquid immersion-cooled power module includes an enclosure, an insulating liquid filling the enclosure, a substrate disposed inside the enclosure, the substrate having a plurality of cooling fins in thermal contact with the insulating liquid, and a chip on the substrate inside the enclosure. Another embodiment liquid immersion-cooled power module further includes a connection body electrically connecting the plurality of substrates to each other.

公开(公告)号：US20240203814A1

公开(公告)日：2024-06-20

申请号：US18588034

申请日：2024-02-27

申请人： ROHM CO., LTD.

发明人： Kazuki YOSHIDA ,  Hajime KATAOKA

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L29/417

CPC分类号： H01L23/3171 ,  H01L24/40 ,  H01L29/41775 ,  H01L24/37 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2924/13091

摘要： A semiconductor device includes a semiconductor element and a conductive member. The semiconductor element includes a first wiring line connected to the conductive member, a second wiring line separated from the first wiring line and at least partially surrounding the first wiring line, and a passivation layer covering the first wiring line and the second wiring line. The passivation layer includes a first opening partially exposing the first wiring line as a connection region for the conductive member, a first slit located between the first opening and the second wiring line and partially exposing the first wiring line, and a second slit partially exposing the second wiring line.

公开(公告)号：US20240170375A1

公开(公告)日：2024-05-23

申请号：US17993390

申请日：2022-11-23

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Tatsuaki TSUKUDA ,  Tomohiro NISHIYAMA ,  Toshiyuki HATA ,  Koichi HASEGAWA

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/37 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40175 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48145 ,  H01L2224/48245 ,  H01L2224/73265

摘要： The on-resistance of a semiconductor device is reduced. A package structure composing the semiconductor device includes a die pad, a plurality of leads, a first semiconductor chip having a power transistor and mounted on the die pad, and a second semiconductor chip including a control circuit for controlling the power transistor and mounted on the first semiconductor chip. Here, a source pad of the first semiconductor chip is electrically connected to a first lead and a seventh lead of the plurality of leads via a clip made of a material which is copper as a main component, and the width (and cross-sectional area) of the clip is larger than the width (and diameter) of a wire in plan view.

公开(公告)号：US20240145349A1

公开(公告)日：2024-05-02

申请号：US18474325

申请日：2023-09-26

申请人： DENSO CORPORATION

发明人： TAKAHIRO HIRANO ,  MASAYOSHI NISHIHATA ,  CHIHIRO KATO

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/49517 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L25/072 ,  H01L23/49562 ,  H01L2224/3701 ,  H01L2224/37147 ,  H01L2224/37644 ,  H01L2224/37655 ,  H01L2224/40137 ,  H01L2224/40175 ,  H01L2224/40245 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1067 ,  H01L2924/13055 ,  H01L2924/13091

摘要： A semiconductor device includes: a first element for one of upper and lower arm circuits; a second element for the other of the upper and lower arm circuits; a first wiring having a first mounting portion on which the first element is disposed and a first power supply terminal portion connected with the first mounting portion; a second wiring having a second mounting portion on which the second element is disposed and an output terminal portion connected with the second mounting portion; a clip configured to electrically connect a main electrode of the first element and the second mounting portion; and a third wiring having a connection portion to which a main electrode of the second element is connected and a second power supply terminal portion connected with the connection portion. The third wiring is extended parallel to the first wiring and the clip.

公开(公告)号：US20240128167A1

公开(公告)日：2024-04-18

申请号：US18486232

申请日：2023-10-13

申请人： Littelfuse Semiconductor (Wuxi) Co., Ltd.

发明人： Glenda Zhang ,  Lei She ,  Chao Gao

IPC分类号： H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/62

CPC分类号： H01L23/49541 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/62 ,  H01L24/37 ,  H01L24/84 ,  H01L2224/37118 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37147 ,  H01L2224/84

摘要： A multiple-channel protection device and associated methods thereof. The device includes a first lead having a first chip attachment portion and a second chip attachment portion, a second lead having a third chip attachment portion, and a third lead having a fourth chip attachment portion. A first semiconductor chip is configured to be conductively coupled to the first chip attachment portion and the third chip attachment portion. A second semiconductor chip is configured to be conductively coupled to the second chip attachment portion and the fourth chip attachment portion.

公开(公告)号：US11901326B2

公开(公告)日：2024-02-13

申请号：US17546695

申请日：2021-12-09

申请人： Mitsubishi Electric Corporation

发明人： Shinsuke Asada ,  Satoru Ishikawa ,  Yuki Yano ,  Shohei Ogawa ,  Kiyoshi Arai

IPC分类号： H01L23/00

CPC分类号： H01L24/37 ,  H01L24/35 ,  H01L24/48 ,  H01L2224/35125 ,  H01L2224/3701 ,  H01L2224/48153

摘要： An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

公开(公告)号：US20240038637A1

公开(公告)日：2024-02-01

申请号：US18361502

申请日：2023-07-28

申请人： NEXPERIA B.V.

发明人： Jia Yunn Ting ,  Ting Wei Chang ,  Wing Onn Chaw

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L24/48 ,  H01L24/40 ,  H01L23/49551 ,  H01L24/37 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/48175 ,  H01L2224/40221 ,  H01L2224/37012 ,  H01L2224/73221 ,  H01L2224/92157

摘要： A clip structure for a packaged semiconductor device is provided. The packaged semiconductor device includes a first die portion and a second die portion being electrically isolated from the first die portion. The clip structure includes a first portion, a second portion and a gate wire bond. The first portion is electrically conductive, and the first portion is configured to integrally connect a source terminal with the first die portion. The second portion is electrically conductive and is electrically isolated from the first portion and is configured to connect to a gate terminal. The gate wire bond is configured to connect the second portion with the second die portion.