公开(公告)号：US20040071007A1

公开(公告)日：2004-04-15

申请号：US10638949

申请日：2003-08-11

Applicant: STMicroelectronics SA

Inventor： Stephane Pecheyran ,  Jean-Michel Moragues ,  Benjamin Duval

IPC: G11C011/22

CPC classification number: G11C17/18 ,  G11C17/16

Abstract: An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.

Abstract translation: 反熔丝晶体管包括源极，漏极和阱连接在一起的栅极。 一种用于对抗熔丝晶体管进行编程的方法，包括向栅极施加参考电位，并将大于参考电位的高电位施加到反熔丝晶体管的漏极。 第一存取晶体管连接到反熔丝晶体管。 第一存取晶体管包括连接到反熔丝晶体管的源极的漏极和用于接收高电位的源极。 将高电位施加到反熔丝晶体管的漏极包括接通第一存取晶体管。