公开(公告)号：US20030218924A1

公开(公告)日：2003-11-27

申请号：US10406632

申请日：2003-04-03

Applicant: STMicroelectronics SA

Inventor： Benjamin Duval ,  Fabrice Marinet

IPC: G11C029/00

CPC classification number: G11C17/18

Abstract: A method of programming a row of antifuse memory cells includes breaking down at least N antifuse elements in the memory cells. The breakdown includes the application of a breakdown voltage to the anode of each antifuse element. The antifuse elements are broken down sequentially by groups of P antifuse elements, with P being less than N and at least equal to 1. The antifuse elements of a same group simultaneously receive the breakdown voltage. The breakdown of a next group of antifuse elements immediately takes place after the breakdown of a previous group of antifuse elements.

Abstract translation: 一种编程反熔丝存储单元的行的方法包括在存储单元中分解至少N个反熔丝元件。 击穿包括向每个反熔丝元件的阳极施加击穿电压。 反熔丝元件依次由P个反熔丝元件分组，其中P小于N并且至少等于1.同一组的反熔丝元件同时接收击穿电压。 下一组反熔丝元件的故障立即发生在上一组反熔丝元件击穿之后。

公开(公告)号：US20040071007A1

公开(公告)日：2004-04-15

申请号：US10638949

申请日：2003-08-11

Applicant: STMicroelectronics SA

Inventor： Stephane Pecheyran ,  Jean-Michel Moragues ,  Benjamin Duval

IPC: G11C011/22

CPC classification number: G11C17/18 ,  G11C17/16

Abstract: An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.

Abstract translation: 反熔丝晶体管包括源极，漏极和阱连接在一起的栅极。 一种用于对抗熔丝晶体管进行编程的方法，包括向栅极施加参考电位，并将大于参考电位的高电位施加到反熔丝晶体管的漏极。 第一存取晶体管连接到反熔丝晶体管。 第一存取晶体管包括连接到反熔丝晶体管的源极的漏极和用于接收高电位的源极。 将高电位施加到反熔丝晶体管的漏极包括接通第一存取晶体管。