DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20210074785A1

    公开(公告)日:2021-03-11

    申请号:US16871523

    申请日:2020-05-11

    Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.

    TRANSISTOR SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20220139966A1

    公开(公告)日:2022-05-05

    申请号:US17386854

    申请日:2021-07-28

    Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

    LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230112253A1

    公开(公告)日:2023-04-13

    申请号:US18078072

    申请日:2022-12-08

    Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 µm to about 2 µm, and a length of the channel of the third transistor is in a range of about 1 µm to about 2.5 µm.

    TRANSISTOR SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20240145483A1

    公开(公告)日:2024-05-02

    申请号:US18405283

    申请日:2024-01-05

    CPC classification number: H01L27/1222 H01L27/124 H01L27/156

    Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

    LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240107808A1

    公开(公告)日:2024-03-28

    申请号:US18525662

    申请日:2023-11-30

    CPC classification number: H10K59/1213 H10K59/1216 H01L29/6675

    Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

    DISPLAY DEVICE
    6.
    发明申请

    公开(公告)号:US20210150960A1

    公开(公告)日:2021-05-20

    申请号:US17038256

    申请日:2020-09-30

    Abstract: A display device includes: a pixel unit including a plurality of pixels; a scan driver having a plurality of stages and configured to supply a scan signal to the pixel unit; and a light emission control driver having a plurality of stages and configured to supply a light emission control signal to the pixel unit, wherein a first transistor of a plurality of transistors included in at least one of the stages of the scan driver or the stages of the light emission control driver comprises: an active layer pattern on a base layer, and including a channel region forming a channel, and first and second regions on opposite sides of the channel region; and a gate electrode spaced apart from the active layer pattern with a first insulating film therebetween, and overlapping the channel region.

Patent Agency Ranking