公开(公告)号：US20210050536A1

公开(公告)日：2021-02-18

申请号：US16906866

申请日：2020-06-19

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Yung Bin CHUNG ,  Chul Min BAE ,  Ji Hye HAN ,  Eun Jin KWAK

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

公开(公告)号：US20220278288A1

公开(公告)日：2022-09-01

申请号：US17744543

申请日：2022-05-13

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Yung Bin CHUNG ,  Chul Min BAE ,  Ji Hye HAN ,  Eun Jin KWAK

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

公开(公告)号：US20210074785A1

公开(公告)日：2021-03-11

申请号：US16871523

申请日：2020-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： Doo Na KIM ,  Keun Woo KIM ,  Tae Wook KANG ,  Do Kyeong LEE ,  Yong Su LEE ,  Jae Hwan CHU ,  Kwang Hyun KIM ,  Yeoung Keol WOO ,  Yung Bin CHUNG

IPC: H01L27/32

Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.

公开(公告)号：US20240162235A1

公开(公告)日：2024-05-16

申请号：US18509934

申请日：2023-11-15

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol WOO ,  Sang Wook LEE ,  Yeon Hong KIM ,  Yung Bin CHUNG

IPC: H01L27/12 ,  H01L25/075 ,  H01L25/16

CPC classification number: H01L27/1225 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/127

Abstract: A display device includes: a substrate; a first semiconductor layer and a dummy semiconductor layer on the same layer on a surface of the substrate and comprising the same material as each other; a second semiconductor layer overlapping the dummy semiconductor layer in a direction perpendicular to the surface of the substrate, the first semiconductor layer and the second semiconductor layer comprising different materials from each other; a first transistor comprising the first semiconductor layer, a first source electrode, and a first drain electrode, the first source electrode and the first drain electrode being connected to the first semiconductor layer; a second transistor comprising the second semiconductor layer, a second source electrode, and a second drain electrode, the second source electrode and the second drain electrode being connected to the second semiconductor layer; and a light- emitting element connected to the first transistor.

公开(公告)号：US20200020741A1

公开(公告)日：2020-01-16

申请号：US16388511

申请日：2019-04-18

Applicant: Samsung Display Co., Ltd.

Inventor： Yeoung Keol WOO

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L33/60

Abstract: A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.