公开(公告)号：US20220139966A1

公开(公告)日：2022-05-05

申请号：US17386854

申请日：2021-07-28

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit KIM ,  Mee Jae KANG ,  Keun Woo KIM ,  Doo-Na KIM ,  Sang Sub KIM ,  Do Kyeong LEE ,  Jae Hwan CHU

IPC: H01L27/12

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

公开(公告)号：US20240145483A1

公开(公告)日：2024-05-02

申请号：US18405283

申请日：2024-01-05

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit KIM ,  Mee Jae KANG ,  Keun Woo KIM ,  Doo-Na KIM ,  Sang Sub KIM ,  Do Kyeong LEE ,  Jae Hwan CHU

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/156

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

公开(公告)号：US20130237011A1

公开(公告)日：2013-09-12

申请号：US13679311

申请日：2012-11-16

Applicant: SAMSUNG DISPLAY CO., LTD. ,  KOREAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOL

Inventor： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Seung-Ho JUNG ,  Tae-Young CHOI ,  Doo-Na KIM ,  Byeong-Soo BAE ,  Chan-Woo YANG ,  Byung-Ju LEE ,  Kang-Moon JO ,  Young-Hwan HWANG ,  Jun-Hyuck JEON

IPC: C09D1/00 ,  H01L29/66

CPC classification number: C09D1/00 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4.

Abstract translation: 制造薄膜晶体管基板的方法包括：在基板上涂布组合物以在基板上形成薄膜，加热薄膜，并对薄膜进行构图以形成氧化物半导体图案。 该组合物包括金属硝酸盐和水。 组合物的氢（pH）的电位为约1至约4。