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公开(公告)号:US12033988B2
公开(公告)日:2024-07-09
申请号:US17382825
申请日:2021-07-22
发明人: In Hyuk Kim , Dong Gyun Kim , Jae Hoon Jung , Jin Oh Kwag , Hee Yeon Yoo , Sung Chan Jo , Jeong In Choi , Hye Jung Hong , Jong Hyuk Kang , Dong Eon Lee , Hyun Min Cho
IPC分类号: H01L25/075 , H01L21/68 , H01L21/78 , H01L33/00
CPC分类号: H01L25/0753 , H01L21/68 , H01L21/7806 , H01L33/005
摘要: An apparatus includes a base including a receiving portion that receives a substrate on which semiconductor elements are disposed; and at least one ultrasonic generator that generates and applies ultrasonic waves to the substrate placed in the base.