LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220384673A1

    公开(公告)日:2022-12-01

    申请号:US17580059

    申请日:2022-01-20

    Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.

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