公开(公告)号：US20220384673A1

公开(公告)日：2022-12-01

申请号：US17580059

申请日：2022-01-20

Applicant: Samsung Display Co., LTD.

Inventor： Ji Song Chae ,  Joo Hee Lee ,  Jin Hyuk Jang ,  Sang Ho Jeon ,  Si Sung Kim ,  Dong Eon Lee ,  Hyung Seok Kim ,  Jong Jin Lee

IPC: H01L33/00 ,  H01L33/02

Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.