公开(公告)号：US12300768B2

公开(公告)日：2025-05-13

申请号：US17704659

申请日：2022-03-25

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Seok Kim ,  Si Sung Kim ,  Jong Jin Lee ,  Dong Eon Lee

IPC: H01L33/44 ,  H01L25/16 ,  H01L33/00 ,  H01L33/38 ,  H01L23/00 ,  H01L33/20

Abstract: A light emitting element includes a first semiconductor layer; an emission layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the emission layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer and surrounding a portion of the electrode layer at an end portion of the light emitting element on which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer; a second surface facing the first surface and having a width less than a width of the first surface; and a side surface that connects the first surface and the second surface and has a slope in a range of about 75° to about 90° with respect to the first surface of the electrode layer.

公开(公告)号：US20220384673A1

公开(公告)日：2022-12-01

申请号：US17580059

申请日：2022-01-20

Applicant: Samsung Display Co., LTD.

Inventor： Ji Song Chae ,  Joo Hee Lee ,  Jin Hyuk Jang ,  Sang Ho Jeon ,  Si Sung Kim ,  Dong Eon Lee ,  Hyung Seok Kim ,  Jong Jin Lee

IPC: H01L33/00 ,  H01L33/02

Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.