公开(公告)号：USD802591S1

公开(公告)日：2017-11-14

申请号：US29573930

申请日：2016-08-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Kyoung-Eun Lee ,  Chang Yong Jeong

公开(公告)号：US09755182B2

公开(公告)日：2017-09-05

申请号：US14881992

申请日：2015-10-13

Applicant: Samsung Display Co., Ltd.

Inventor： Chang Yong Jeong ,  Mu Gyeom Kim ,  Yong Il Kim

IPC: H01L51/52

CPC classification number: H01L51/5246 ,  H01L51/5237 ,  H01L51/5256

Abstract: Provided is an organic light emitting diode display including a substrate; a display unit formed on the substrate and including a thin film transistor and an organic light emitting diode; a thin film encapsulation covering and encapsulating the display unit and formed by a laminated structure made of at least one first inorganic layer, a first organic layer, and a second inorganic layer; and a protective bezel fixed to the substrate and spaced apart from the side of the substrate to surround edges of the substrate and the thin film encapsulation.

公开(公告)号：USD781292S1

公开(公告)日：2017-03-14

申请号：US29538827

申请日：2015-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Jung Hyun Kim ,  Chang Yong Jeong

公开(公告)号：USD770449S1

公开(公告)日：2016-11-01

申请号：US29536514

申请日：2015-08-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Kyoung-Eun Lee ,  Chang Yong Jeong

公开(公告)号：USD811395S1

公开(公告)日：2018-02-27

申请号：US29602286

申请日：2017-04-28

Applicant: Samsung Display Co., Ltd.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Jung Hyun Kim ,  Chang Yong Jeong

公开(公告)号：USD810741S1

公开(公告)日：2018-02-20

申请号：US29602281

申请日：2017-04-28

Applicant: Samsung Display Co., Ltd.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Kyoung-Eun Lee ,  Chang Yong Jeong

公开(公告)号：US20180040739A1

公开(公告)日：2018-02-08

申请号：US15662502

申请日：2017-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SUNG WOOK WOO ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/10 ,  H01L29/04

CPC classification number: H01L29/78693 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

公开(公告)号：USD780755S1

公开(公告)日：2017-03-07

申请号：US29538830

申请日：2015-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Jung Hyun Kim ,  Chang Yong Jeong

公开(公告)号：US20180190204A1

公开(公告)日：2018-07-05

申请号：US15844618

申请日：2017-12-17

Applicant: Samsung Display Co., Ltd

Inventor： Kyoung Ju SHIN ,  Cheol Gon Lee ,  Sang Uk Lim ,  Chang Yong Jeong

IPC: G09G3/3266 ,  G09G3/325 ,  G09G3/3275 ,  G09G3/36 ,  G02F1/1343

CPC classification number: G09G3/3266 ,  G02F1/134336 ,  G09G3/325 ,  G09G3/3275 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2310/0216 ,  G09G2310/0251 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/0289 ,  G11C19/28

Abstract: A scan driver, includes a plurality of stage circuits, each of which includes a driving circuit unit providing an output signal and an inverter inverting the output signal of the driving circuit unit and generating a scan signal, in which the inverter includes a first transistor and a second transistor, which are complementarily operated, the first transistor is a P-type polysilicon transistor, and the second transistor is an N-type oxide semiconductor transistor. A display device may include the scan driver.

公开(公告)号：USD781856S1

公开(公告)日：2017-03-21

申请号：US29538348

申请日：2015-09-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Designer： Jong Sung Bae ,  Mu Gyeom Kim ,  Kyoung-Eun Lee ,  Chang Yong Jeong