公开(公告)号：US11335869B2

公开(公告)日：2022-05-17

申请号：US16906866

申请日：2020-06-19

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol Woo ,  Yung Bin Chung ,  Chul Min Bae ,  Ji Hye Han ,  Eun Jin Kwak

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

公开(公告)号：US20190096858A1

公开(公告)日：2019-03-28

申请号：US15927678

申请日：2018-03-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yeoung Keol Woo ,  Chul Min Bae ,  Heon Sik Ha

IPC: H01L25/075 ,  H01L33/62 ,  H01L23/00

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode on the substrate and spaced apart from each other; a light emitting diode between the first electrode and the second electrode and connected to the first and second electrodes; a first contact on the first electrode; and a second contact on the second electrode. The first contact contacts the first electrode and a first portion of the light emitting diode, and the second contact contacts the second electrode and a second portion of the light emitting diode.

公开(公告)号：US20210074879A1

公开(公告)日：2021-03-11

申请号：US17102293

申请日：2020-11-23

Applicant: Samsung Display Co., Ltd.

Inventor： Yeoung Keol Woo ,  Chul Min Bae

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08 ,  H01L25/075

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode provided at a distance from each other on the substrate and extending in one direction; a plurality of light emitting diodes provided between the first electrode and the second electrode, and connected to the first electrode and the second electrode; and a residual pattern provided between at least one of the plurality of light emitting diodes and the substrate.

公开(公告)号：US10802200B2

公开(公告)日：2020-10-13

申请号：US16536260

申请日：2019-08-08

Applicant: Samsung Display Co., Ltd.

Inventor： Chang Ok Kim ,  Chul Min Bae ,  Ji Hye Han ,  Junghwan Yi ,  Shin Il Choi

IPC: F21V8/00 ,  G02B5/28

Abstract: A backlight unit may include a light source, a light guide plate neighboring the light source, a low refractive index layer disposed on the light guide plate, a blocking layer disposed on the low refractive index layer, and a wavelength conversion layer disposed on the blocking layer and including quantum dots. A refractive index of the low refractive index layer may be less than a refractive index of the light guide plate.

公开(公告)号：US12094977B2

公开(公告)日：2024-09-17

申请号：US18109301

申请日：2023-02-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji Hye Han ,  Jung Yun Jo ,  Chul Min Bae

IPC: H01L27/12 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H10K59/1213

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

公开(公告)号：US12082451B2

公开(公告)日：2024-09-03

申请号：US17991396

申请日：2022-11-21

Applicant: Samsung Display Co., LTD.

Inventor： Ji Hye Han ,  Chul Min Bae ,  Chang Ok Kim

IPC: H10K59/124 ,  H01L29/786 ,  H10K59/121 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K59/124 ,  H01L29/786 ,  H10K59/1213 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K2102/00

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

公开(公告)号：US11532682B2

公开(公告)日：2022-12-20

申请号：US16879291

申请日：2020-05-20

Applicant: Samsung Display Co., LTD.

Inventor： Ji Hye Han ,  Chul Min Bae ,  Chang Ok Kim

IPC: H01L27/32 ,  H01L51/56 ,  H01L29/786

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

公开(公告)号：US10607968B2

公开(公告)日：2020-03-31

申请号：US15927678

申请日：2018-03-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yeoung Keol Woo ,  Chul Min Bae ,  Heon Sik Ha

IPC: H01L25/075 ,  H01L33/62 ,  H01L23/00 ,  H01L33/38

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode on the substrate and spaced apart from each other; a light emitting diode between the first electrode and the second electrode and connected to the first and second electrodes; a first contact on the first electrode; and a second contact on the second electrode. The first contact contacts the first electrode and a first portion of the light emitting diode, and the second contact contacts the second electrode and a second portion of the light emitting diode.

公开(公告)号：US10340414B2

公开(公告)日：2019-07-02

申请号：US15864885

申请日：2018-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Yeoung Keol Woo ,  Chul Min Bae

IPC: H01L33/08 ,  H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  B82B3/00

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode provided at a distance from each other on the substrate and extending in one direction; a plurality of light emitting diodes provided between the first electrode and the second electrode, and connected to the first electrode and the second electrode; and a residual pattern provided between at least one of the plurality of light emitting diodes and the substrate.

公开(公告)号：US12035612B2

公开(公告)日：2024-07-09

申请号：US17744543

申请日：2022-05-13

Applicant: Samsung Display Co., LTD.

Inventor： Yeoung Keol Woo ,  Yung Bin Chung ,  Chul Min Bae ,  Ji Hye Han ,  Eun Jin Kwak

IPC: H10K77/10 ,  H10K59/12 ,  H10K59/126 ,  H10K71/00 ,  H10K71/80 ,  H10K102/00

CPC classification number: H10K77/111 ,  H10K59/126 ,  H10K71/00 ,  H10K71/80 ,  H10K59/1201 ,  H10K2102/00 ,  H10K2102/311 ,  H10K2102/351

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.