公开(公告)号：US09293484B2

公开(公告)日：2016-03-22

申请号：US14682627

申请日：2015-04-09

Applicant: Samsung Display Co., Ltd.

Inventor： Joo Ae Youn ,  Hoon Kang ,  Sung Hoon Kim ,  Hye Won Yoo

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/1259 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78636

Abstract: A thin film transistor display panel includes a gate electrode on a substrate; a gate insulating layer on the substrate and the gate electrode; a planarization layer on the gate insulating layer and at opposing sides of the gate electrode, where the planarization layer exposes the gate insulating layer; a semiconductor layer on the gate insulating layer; and a source electrode and a drain electrode on the semiconductor layer and spaced apart from each other.

公开(公告)号：US09082855B2

公开(公告)日：2015-07-14

申请号：US13858177

申请日：2013-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Joo Ae Youn ,  Hoon Kang ,  Sung Hoon Kim ,  Hye Won Yoo

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1259 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78636

Abstract: A thin film transistor display panel includes a gate electrode on a substrate; a gate insulating layer on the substrate and the gate electrode; a planarization layer on the gate insulating layer and at opposing sides of the gate electrode, where the planarization layer exposes the gate insulating layer; a semiconductor layer on the gate insulating layer; and a source electrode and a drain electrode on the semiconductor layer and spaced apart from each other.

Abstract translation: 薄膜晶体管显示面板包括在基板上的栅电极; 基板上的栅极绝缘层和栅电极; 所述栅极绝缘层上和所述栅电极的相对侧的平坦化层，其中所述平坦化层暴露所述栅极绝缘层; 栅极绝缘层上的半导体层; 以及在半导体层上的源电极和漏电极，彼此间​​隔开。