公开(公告)号：US20240304727A1

公开(公告)日：2024-09-12

申请号：US18525551

申请日：2023-11-30

Applicant: Samsung Display Co., Ltd.

Inventor： Eunhyun Kim ,  Jongbeom Ko ,  Yeonhong Kim ,  Yeonkeon Moon ,  Sunhee Lee ,  Junghoon Lee

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66742 ,  H10K59/1201 ,  H10K59/1213

Abstract: A method of fabricating a display apparatus includes providing a substrate having a first thin film transistor region and a second thin film transistor region; forming a first oxide semiconductor layer on the substrate; forming a first gate insulating layer covering the first oxide semiconductor layer; forming a second oxide semiconductor layer on the substrate; forming a second gate insulating layer on the substrate; forming a first gate electrode in the first thin film transistor region and forming a second gate electrode in the second thin film transistor region, over the second gate insulating layer; and forming a first gate electrode stack and a second gate electrode stack by etching the first gate insulating layer and etching the second gate insulating layer by using the first gate electrode and the second gate electrode as etching masks.

公开(公告)号：US20240321895A1

公开(公告)日：2024-09-26

申请号：US18528823

申请日：2023-12-05

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonhong Kim ,  Jongbeom Ko ,  Eunhyun Kim ,  Junghoon Lee ,  Sunhee Lee

IPC: H01L27/12

CPC classification number: H01L27/1218 ,  H01L27/1237 ,  H10K59/1201 ,  H10K59/1213 ,  H10K2102/351

Abstract: A display device includes a substrate, a first oxide semiconductor layer on the substrate, a first gate insulating layer on the substrate and covering an upper surface of the first oxide semiconductor layer, a second oxide semiconductor layer on the first gate insulating layer, and a second gate insulating layer covering an upper surface of the second oxide semiconductor layer. The first oxide semiconductor layer includes a channel region between a source region and a drain region The second oxide semiconductor layer includes a channel region between a source region and a drain region. A difference between a thickness of the first gate insulating layer and a thickness of the second gate insulating layer is 500 Å or less.

公开(公告)号：US20240260315A1

公开(公告)日：2024-08-01

申请号：US18373094

申请日：2023-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonhong Kim ,  Jongbeom Ko ,  Eunhyun Kim ,  Yeonkeon Moon ,  Sunhee Lee ,  Junghoon Lee

IPC: H10K59/121 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/1201

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed in the display area and including a driving thin-film transistor and a switching thin-film transistor, wherein the driving thin-film transistor includes a driving semiconductor layer, and the switching thin-film transistor includes a switching semiconductor layer, a display element connected to the pixel circuit, and a built-in driving circuit portion disposed in the peripheral area and including a first peripheral thin-film transistor including a first peripheral semiconductor layer, wherein the driving semiconductor layer and the switching semiconductor layer include a same material and each have a mobility less than a mobility of the first peripheral semiconductor layer.