公开(公告)号：US11677030B2

公开(公告)日：2023-06-13

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo Sohn ,  Yeonkeon Moon ,  Myounghwa Kim ,  Taesang Kim ,  Geunchul Park ,  Joonseok Park ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/24 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7869 ,  H01L21/823412 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/78696 ,  H01L27/3262

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US11309429B2

公开(公告)日：2022-04-19

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok Park ,  Jihun Lim ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20220149132A1

公开(公告)日：2022-05-12

申请号：US17246989

申请日：2021-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeonkeon Moon ,  Taesang Kim ,  Joonseok Park ,  Sangwoo Sohn ,  Soyoung Koo

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.

公开(公告)号：US20210280667A1

公开(公告)日：2021-09-09

申请号：US17328026

申请日：2021-05-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US20240260315A1

公开(公告)日：2024-08-01

申请号：US18373094

申请日：2023-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonhong Kim ,  Jongbeom Ko ,  Eunhyun Kim ,  Yeonkeon Moon ,  Sunhee Lee ,  Junghoon Lee

IPC: H10K59/121 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/1201

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed in the display area and including a driving thin-film transistor and a switching thin-film transistor, wherein the driving thin-film transistor includes a driving semiconductor layer, and the switching thin-film transistor includes a switching semiconductor layer, a display element connected to the pixel circuit, and a built-in driving circuit portion disposed in the peripheral area and including a first peripheral thin-film transistor including a first peripheral semiconductor layer, wherein the driving semiconductor layer and the switching semiconductor layer include a same material and each have a mobility less than a mobility of the first peripheral semiconductor layer.

公开(公告)号：US11950455B2

公开(公告)日：2024-04-02

申请号：US17287936

申请日：2019-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonkeon Moon ,  Joonseok Park ,  Kwang-suk Kim ,  Myounghwa Kim ,  Taesang Kim ,  Geunchul Park ,  Kyungjin Jeon

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/131

Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.

公开(公告)号：US11678547B2

公开(公告)日：2023-06-13

申请号：US17328026

申请日：2021-05-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

CPC classification number: H01L27/3279 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L2227/323

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US20240304727A1

公开(公告)日：2024-09-12

申请号：US18525551

申请日：2023-11-30

Applicant: Samsung Display Co., Ltd.

Inventor： Eunhyun Kim ,  Jongbeom Ko ,  Yeonhong Kim ,  Yeonkeon Moon ,  Sunhee Lee ,  Junghoon Lee

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66742 ,  H10K59/1201 ,  H10K59/1213

Abstract: A method of fabricating a display apparatus includes providing a substrate having a first thin film transistor region and a second thin film transistor region; forming a first oxide semiconductor layer on the substrate; forming a first gate insulating layer covering the first oxide semiconductor layer; forming a second oxide semiconductor layer on the substrate; forming a second gate insulating layer on the substrate; forming a first gate electrode in the first thin film transistor region and forming a second gate electrode in the second thin film transistor region, over the second gate insulating layer; and forming a first gate electrode stack and a second gate electrode stack by etching the first gate insulating layer and etching the second gate insulating layer by using the first gate electrode and the second gate electrode as etching masks.

公开(公告)号：US11723244B2

公开(公告)日：2023-08-08

申请号：US17152249

申请日：2021-01-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyelim Choi ,  Joonseok Park ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim

IPC: H10K59/131 ,  H10K59/122 ,  H10K59/12

CPC classification number: H10K59/131 ,  H10K59/122 ,  H10K59/1201

Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

公开(公告)号：US11696470B2

公开(公告)日：2023-07-04

申请号：US17246989

申请日：2021-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeonkeon Moon ,  Taesang Kim ,  Joonseok Park ,  Sangwoo Sohn ,  Soyoung Koo

IPC: H01L27/32 ,  H01L51/56 ,  H10K59/121 ,  H10K71/00 ,  H01L27/12 ,  H10K59/38 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K71/00 ,  H01L27/1225 ,  H01L27/1251 ,  H10K59/1201 ,  H10K59/38

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.