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公开(公告)号：US20240304727A1
公开(公告)日：2024-09-12
申请号：US18525551
申请日：2023-11-30
Applicant: Samsung Display Co., Ltd.
Inventor： Eunhyun Kim , Jongbeom Ko , Yeonhong Kim , Yeonkeon Moon , Sunhee Lee , Junghoon Lee
IPC: H01L29/786 , H01L29/423 , H01L29/66 , H10K59/12 , H10K59/121
CPC classification number: H01L29/7869 , H01L29/42384 , H01L29/66742 , H10K59/1201 , H10K59/1213
Abstract: A method of fabricating a display apparatus includes providing a substrate having a first thin film transistor region and a second thin film transistor region; forming a first oxide semiconductor layer on the substrate; forming a first gate insulating layer covering the first oxide semiconductor layer; forming a second oxide semiconductor layer on the substrate; forming a second gate insulating layer on the substrate; forming a first gate electrode in the first thin film transistor region and forming a second gate electrode in the second thin film transistor region, over the second gate insulating layer; and forming a first gate electrode stack and a second gate electrode stack by etching the first gate insulating layer and etching the second gate insulating layer by using the first gate electrode and the second gate electrode as etching masks.
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公开(公告)号：US20170317159A1
公开(公告)日：2017-11-02
申请号：US15583244
申请日：2017-05-01
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： WALJUN KIM , Yeonhong Kim , Junghyun Kim , Taejin Kim , Kiwan Ahn , Yongjae Jang
CPC classification number: H01L27/3276 , H01L27/1222 , H01L27/1237 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/3246 , H01L27/3262 , H01L27/3265 , H01L29/78648 , H01L29/78696
Abstract: A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.
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公开(公告)号：US20170117476A1
公开(公告)日：2017-04-27
申请号：US15093319
申请日：2016-04-07
Applicant: Samsung Display Co., Ltd.
Inventor： Waljun KIM , Yeonhong Kim , Junghyun Kim , Jongyun Kim , Sungeun Lee , Kwangyoung Choi
CPC classification number: H01L51/0018 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L51/5012 , H01L51/5221 , H01L51/5225 , H01L51/5228 , H01L51/5253 , H01L51/56 , H01L2227/323
Abstract: A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
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公开(公告)号：US12262598B2
公开(公告)日：2025-03-25
申请号：US18378656
申请日：2023-10-11
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
IPC: H10K59/124 , H01L27/12 , H10K59/121 , H10K71/00 , H01L25/16 , H01L25/18 , H10K59/12 , H10K59/65
Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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公开(公告)号：US20240237398A9
公开(公告)日：2024-07-11
申请号：US18544515
申请日：2023-12-19
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Sunhee Lee , Seungjun Lee , Seunghun Lee
IPC: H10K59/121 , H10K50/844 , H10K59/65 , H10K71/00
CPC classification number: H10K59/121 , H10K50/844 , H10K59/1213 , H10K59/1216 , H10K59/65 , H10K71/00 , H01L27/1255
Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.
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Patent Agency Ranking
公开(公告)号：US11980060B2
公开(公告)日：2024-05-07
申请号：US17494892
申请日：2021-10-06
Applicant: Samsung Display Co., Ltd.
Inventor： Myeongho Kim , Yeonhong Kim , Jaybum Kim , Kyoung Seok Son , Sunhee Lee , Seungjun Lee , Seunghun Lee , Jun Hyung Lim
IPC: H01L29/08 , H10K59/121 , H10K71/00 , H10K59/12
CPC classification number: H10K59/1216 , H10K59/1213 , H10K71/00 , H10K59/1201
Abstract: A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.
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公开(公告)号：US09893285B2
公开(公告)日：2018-02-13
申请号：US15093319
申请日：2016-04-07
Applicant: Samsung Display Co., Ltd.
Inventor： Waljun Kim , Yeonhong Kim , Junghyun Kim , Jongyun Kim , Sungeun Lee , Kwangyoung Choi
CPC classification number: H01L51/0018 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L51/5012 , H01L51/5221 , H01L51/5225 , H01L51/5228 , H01L51/5253 , H01L51/56 , H01L2227/323
Abstract: A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
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公开(公告)号：US20240321895A1
公开(公告)日：2024-09-26
申请号：US18528823
申请日：2023-12-05
Applicant: Samsung Display Co., Ltd.
Inventor： Yeonhong Kim , Jongbeom Ko , Eunhyun Kim , Junghoon Lee , Sunhee Lee
IPC: H01L27/12
CPC classification number: H01L27/1218 , H01L27/1237 , H10K59/1201 , H10K59/1213 , H10K2102/351
Abstract: A display device includes a substrate, a first oxide semiconductor layer on the substrate, a first gate insulating layer on the substrate and covering an upper surface of the first oxide semiconductor layer, a second oxide semiconductor layer on the first gate insulating layer, and a second gate insulating layer covering an upper surface of the second oxide semiconductor layer. The first oxide semiconductor layer includes a channel region between a source region and a drain region The second oxide semiconductor layer includes a channel region between a source region and a drain region. A difference between a thickness of the first gate insulating layer and a thickness of the second gate insulating layer is 500 Å or less.
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公开(公告)号：US20240260315A1
公开(公告)日：2024-08-01
申请号：US18373094
申请日：2023-09-26
Applicant: Samsung Display Co., Ltd.
Inventor： Yeonhong Kim , Jongbeom Ko , Eunhyun Kim , Yeonkeon Moon , Sunhee Lee , Junghoon Lee
IPC: H10K59/121 , H10K59/12
CPC classification number: H10K59/1213 , H10K59/1201
Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed in the display area and including a driving thin-film transistor and a switching thin-film transistor, wherein the driving thin-film transistor includes a driving semiconductor layer, and the switching thin-film transistor includes a switching semiconductor layer, a display element connected to the pixel circuit, and a built-in driving circuit portion disposed in the peripheral area and including a first peripheral thin-film transistor including a first peripheral semiconductor layer, wherein the driving semiconductor layer and the switching semiconductor layer include a same material and each have a mobility less than a mobility of the first peripheral semiconductor layer.
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公开(公告)号：US11818923B2
公开(公告)日：2023-11-14
申请号：US17353640
申请日：2021-06-21
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
IPC: H01L27/32 , H01L51/56 , H10K59/124 , H10K71/00 , H01L27/12 , H10K59/121 , H01L25/18 , H01L25/16 , H10K59/12 , H10K59/65
CPC classification number: H10K59/124 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H10K59/1213 , H10K59/1216 , H10K71/00 , H01L25/167 , H01L25/18 , H10K59/1201 , H10K59/121 , H10K59/65
Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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