公开(公告)号：US10998343B2

公开(公告)日：2021-05-04

申请号：US16591859

申请日：2019-10-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung Kwon Choo ,  Joon Hwa Bae ,  Hyun Jin Cho ,  Jun Hyuk Cheon ,  Zi Yeon Yoon ,  Woo Jin Cho ,  Sung Hwan Choi ,  Jeong Hye Choi

IPC: H01L27/12 ,  G02F1/1368 ,  H01L21/321 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L29/78

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

公开(公告)号：US10910605B2

公开(公告)日：2021-02-02

申请号：US16883780

申请日：2020-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Hwa Bae ,  Hyun Jin Cho ,  Byoung Kwon Choo ,  Woo Jin Cho

IPC: H01L51/56 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

公开(公告)号：US10700310B2

公开(公告)日：2020-06-30

申请号：US16007788

申请日：2018-06-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Hwa Bae ,  Hyun Jin Cho ,  Byoung Kwon Choo ,  Woo Jin Cho

IPC: H01L51/56 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

公开(公告)号：US20200035715A1

公开(公告)日：2020-01-30

申请号：US16591859

申请日：2019-10-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BYOUNG KWON CHOO ,  Joon Hwa Bae ,  Hyun Jin Cho ,  Jun Hyuk Cheon ,  Zi Yeon Yoon ,  Woo Jin Cho ,  Sung Hwan Chol ,  Jeong Hye Choi

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/321 ,  G02F1/1368 ,  G02F1/1362 ,  H01L27/32

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

公开(公告)号：US10475817B2

公开(公告)日：2019-11-12

申请号：US15971435

申请日：2018-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung Kwon Choo ,  Joon Hwa Bae ,  Hyun Jin Cho ,  Jun Hyuk Cheon ,  Zi Yeon Yoon ,  Woo Jin Cho ,  Sung Hwan Choi ,  Jeong Hye Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  G02F1/1368 ,  H01L27/12 ,  H01L21/321 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/66 ,  H01L29/78

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.