公开(公告)号：US11502111B2

公开(公告)日：2022-11-15

申请号：US17320963

申请日：2021-05-14

申请人： Samsung Display Co., Ltd.

发明人： Sunwoo Lee ,  Kihyun Kim ,  Younggil Park ,  Seulgi Lee ,  Geunhyuk Choi ,  Jaebum Han

IPC分类号： H01L27/14 ,  H01L27/12 ,  H01L29/786

摘要： A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 μm or greater.