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    Display apparatus
    2.
    发明授权
    Display apparatus 有权

    公开(公告)号：US11502111B2

    公开(公告)日：2022-11-15

    申请号：US17320963

    申请日：2021-05-14

    申请人： Samsung Display Co., Ltd.

    发明人： Sunwoo Lee ,  Kihyun Kim ,  Younggil Park ,  Seulgi Lee ,  Geunhyuk Choi ,  Jaebum Han

    IPC分类号： H01L27/14 ,  H01L27/12 ,  H01L29/786

    摘要： A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 μm or greater.

    Display apparatus
    3.
    发明授权
    Display apparatus 有权

    公开(公告)号：US11315998B2

    公开(公告)日：2022-04-26

    申请号：US16883399

    申请日：2020-05-26

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Jaebum Han ,  Younggil Park ,  Junghwa Park ,  Nari Ahn ,  Sooim Jeong ,  Kinam Kim ,  Moonsung Kim

    IPC分类号： H01L27/14 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49

    摘要： A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220173186A1

    公开(公告)日：2022-06-02

    申请号：US17382425

    申请日：2021-07-22

    申请人： Samsung Display Co., Ltd.

    发明人： Jaebum Han ,  Younggil Park ,  Moonsung Kim ,  Jaisun Kyoung ,  Kihyun Kim ,  Sooim Jeong

    IPC分类号： H01L27/32

    摘要： Provided are a display apparatus with improved display quality and a method of manufacturing the same, the display apparatus including: a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer; a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode, wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE
    6.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE 有权

    公开(公告)号：US20210066424A1

    公开(公告)日：2021-03-04

    申请号：US16837652

    申请日：2020-04-01

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Jaebum Han ,  Younggil Park ,  Junghwa Park ,  Nari Ahn ,  Sooim Jeong

    IPC分类号： H01L27/32 ,  H01L51/56 ,  H01L51/00

    摘要： A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

    DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220181416A1

    公开(公告)日：2022-06-09

    申请号：US17331606

    申请日：2021-05-26

    申请人： Samsung Display Co., Ltd.

    发明人： Moonsung Kim ,  Younggil Park ,  Jaebum Han ,  Sooim Jeong

    IPC分类号： H01L27/32 ,  H01L51/56

    摘要： An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.