公开(公告)号：US10714618B2

公开(公告)日：2020-07-14

申请号：US16129935

申请日：2018-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geum-jung Seong ,  Bo-ra Lim ,  Jeong-yun Lee ,  Ah-reum Ji

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.