公开(公告)号：US10522616B2

公开(公告)日：2019-12-31

申请号：US15823961

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Nam-kyu Cho ,  Tae-soon Kwon ,  Bo-ra Lim ,  Jeong-yun Lee

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.

公开(公告)号：US11011516B2

公开(公告)日：2021-05-18

申请号：US16705799

申请日：2019-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han Lee ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06 ,  H01L27/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US20180294331A1

公开(公告)日：2018-10-11

申请号：US15823961

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Nam-kyu Cho ,  Tae-soon Kwon ,  Bo-ra Lim ,  Jeong-yun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0607 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/41725 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7831 ,  H01L29/785 ,  H01L29/78618 ,  H01L29/78696 ,  H01L2029/7858

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.

公开(公告)号：US10714618B2

公开(公告)日：2020-07-14

申请号：US16129935

申请日：2018-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geum-jung Seong ,  Bo-ra Lim ,  Jeong-yun Lee ,  Ah-reum Ji

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.

公开(公告)号：US10256237B2

公开(公告)日：2019-04-09

申请号：US15656377

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han Lee ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US10559565B2

公开(公告)日：2020-02-11

申请号：US16288727

申请日：2019-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han Lee ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/02

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US20180182756A1

公开(公告)日：2018-06-28

申请号：US15656377

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han LEE ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L29/06 ,  H01L27/11

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L27/0207 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0649

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.