公开(公告)号：US20230276619A1

公开(公告)日：2023-08-31

申请号：US18049061

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin Ju ,  Gyuhyun Kil ,  Hyebin Choi ,  Doosan Back ,  Ahrang Choi ,  Jung-Hoon Han

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  H01L27/10814 ,  H01L27/10894

Abstract: A semiconductor device includes a substrate having first and second active patterns therein, which are spaced apart from each other. The first active pattern has a top surface that is elevated relative to a top surface of the second active pattern. A channel semiconductor layer is provided on the top surface of the first active pattern. A first gate pattern is provided, which includes a first insulating pattern, on the channel semiconductor layer. A second gate pattern is provided, which includes a second insulating pattern having a thickness greater than a thickness of the first insulating pattern, on the top surface of the second active pattern.

公开(公告)号：US20230209808A1

公开(公告)日：2023-06-29

申请号：US17880723

申请日：2022-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ahrang Choi ,  Chansic Yoon ,  Hoin Ryu ,  Junghoon Han

IPC: H01L27/108

CPC classification number: H01L27/10823 ,  H01L27/10814

Abstract: A semiconductor device includes active regions defined by a device isolation region in a substrate; trenches extending in a first direction to intersect the active regions; buried gate structures buried in the trenches, respectively, and having upper surfaces located on a level lower than a level of upper surfaces of the active regions; a buffer structure covering the active regions, the isolation region, and the buried gate structures; bit line structures extending in a second direction intersecting the first direction on the active regions and connected to the active regions; storage node contacts between the bit line structures, penetrating through the buffer structure and in contact with the active regions; and capacitor structures in contact with an upper surface of the storage node contacts.