公开(公告)号：US09786764B2

公开(公告)日：2017-10-10

申请号：US14920267

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Jin Park ,  Chung-Hwan Shin ,  Sung-Woo Kang ,  Young-Mook Oh ,  Sun-Jung Lee ,  Jeong-Nam Han

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L29/66545 ,  H01L21/28518 ,  H01L21/76816 ,  H01L21/76831 ,  H01L23/485 ,  H01L29/66795 ,  H01L29/7855 ,  H01L2029/7858 ,  H01L2221/1063

Abstract: A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain formed on upper portions of the active fin and disposed at one side of the gate, an interlayer insulation layer covering the gate and the source/drain, a source/drain contact passing through the interlayer insulation layer to be connected to the source/drain and including a first contact region and a second contact region positioned between the source/drain and the first contact region, and a spacer layer formed between the first contact region and the interlayer insulation layer. A width of the second contact region in the first direction is greater than the sum of a width of the first contact region in the first direction and a width of the spacer layer in the first direction.