公开(公告)号：US20240321921A1

公开(公告)日：2024-09-26

申请号：US18610413

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seounghyun KIM ,  Changhyo KOO ,  Sangchun PARK ,  Kwanghee LEE ,  Wook LEE ,  Haeyeon CHUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645

Abstract: Provided is an image sensor including a device isolation structure. The image sensor includes a semiconductor substrate including a pixel array including a plurality of pixels, a first photoelectric conversion device and a second photoelectric conversion device inside the semiconductor substrate and included in each of the plurality of pixels, microlenses on the first photoelectric conversion device and the second photoelectric conversion device and a device isolation structure between the plurality of pixels and between the first photoelectric conversion device and the second photoelectric conversion device, the device isolation structure opening a part between the first photoelectric conversion device and the second photoelectric conversion device, including an open region at each edge of the plurality of pixels, and may be continuous in the pixel array.