公开(公告)号：US20240321922A1

公开(公告)日：2024-09-26

申请号：US18612035

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchun PARK ,  Sungsoo CHOI ,  Seounghyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14636 ,  H01L27/1464

Abstract: A pixel includes a semiconductor substrate including a first surface and a second surface, a plurality of photoelectric conversion regions between the first surface and the second surface of the semiconductor substrate, one or more floating diffusion regions on the first surface of the semiconductor substrate and spaced apart from the plurality of photoelectric conversion regions; a plurality of vertical transmission gates configured to surround a path of charges transferred from each photoelectric conversion region of the plurality of photoelectric conversion regions to the one or more floating diffusion regions; a floating diffusion region connection pad on the one or more floating diffusion regions; and a metal contact connected to the floating diffusion region connection pad.

公开(公告)号：US20240321921A1

公开(公告)日：2024-09-26

申请号：US18610413

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seounghyun KIM ,  Changhyo KOO ,  Sangchun PARK ,  Kwanghee LEE ,  Wook LEE ,  Haeyeon CHUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645

Abstract: Provided is an image sensor including a device isolation structure. The image sensor includes a semiconductor substrate including a pixel array including a plurality of pixels, a first photoelectric conversion device and a second photoelectric conversion device inside the semiconductor substrate and included in each of the plurality of pixels, microlenses on the first photoelectric conversion device and the second photoelectric conversion device and a device isolation structure between the plurality of pixels and between the first photoelectric conversion device and the second photoelectric conversion device, the device isolation structure opening a part between the first photoelectric conversion device and the second photoelectric conversion device, including an open region at each edge of the plurality of pixels, and may be continuous in the pixel array.