公开(公告)号：US20240321921A1

公开(公告)日：2024-09-26

申请号：US18610413

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seounghyun KIM ,  Changhyo KOO ,  Sangchun PARK ,  Kwanghee LEE ,  Wook LEE ,  Haeyeon CHUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645

Abstract: Provided is an image sensor including a device isolation structure. The image sensor includes a semiconductor substrate including a pixel array including a plurality of pixels, a first photoelectric conversion device and a second photoelectric conversion device inside the semiconductor substrate and included in each of the plurality of pixels, microlenses on the first photoelectric conversion device and the second photoelectric conversion device and a device isolation structure between the plurality of pixels and between the first photoelectric conversion device and the second photoelectric conversion device, the device isolation structure opening a part between the first photoelectric conversion device and the second photoelectric conversion device, including an open region at each edge of the plurality of pixels, and may be continuous in the pixel array.

公开(公告)号：US20150001641A1

公开(公告)日：2015-01-01

申请号：US14282230

申请日：2014-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hyun YOO ,  Young-Keun LEE ,  Wook LEE ,  Jong-Sung JEON

IPC: H01L29/78

CPC classification number: H01L29/0649 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/1041 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66795 ,  H01L29/7833 ,  H01L29/7836 ,  H01L29/785

Abstract: A transistor and a semiconductor device, the semiconductor device including an active region; a gate electrode on the active region; and a gate dielectric between the gate electrode and the active region, wherein the active region includes a first part overlapped by the gate electrode, and second and third parts facing each other with the first part therebetween, the first part of the active region includes a first portion having a first width and a second portion having a second width, the second width being greater than the first width, and the second portion of the active region is closer to the second part of the active region than to the third part of the active region.

Abstract translation: 一种晶体管和半导体器件，所述半导体器件包括有源区; 有源区上的栅电极; 以及栅电极和有源区之间的栅极电介质，其中所述有源区包括与所述栅电极重叠的第一部分，以及彼此面对的第二部分和第三部分，所述有源区的所述第一部分包括： 具有第一宽度的第一部分和具有第二宽度的第二部分，第二宽度大于第一宽度，并且有源区域的第二部分更接近有源区域的第二部分，而不是第二部分的第三部分 活跃区域。

公开(公告)号：US20140316760A1

公开(公告)日：2014-10-23

申请号：US14254337

申请日：2014-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wook LEE ,  Han-Gu KIM ,  Young-Keun LEE ,  Jong-Sung JEON

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: A three-dimensional optoelectrical simulation includes generating a process simulation result including a doping profile of a silicon substrate of image sensor, a structure simulation result with respect to a back end of line structure, and a merged result generated by merging a process simulation result and a structure simulation result, selectively extending the merged result to an extended result by using a process simulation result or a structure simulation result, generating a segmented result for each pixel based on a merged result or an extended result, an optical crosstalk simulation result of image sensor based on a structure simulation result and an optical mesh, and a final simulation result including an electrical crosstalk simulation result of the image sensor based on a segmented result for each pixel and an optical crosstalk simulation result.

Abstract translation: 三维光电仿真包括生成包括图像传感器的硅衬底的掺杂分布，相对于线结构的后端的结构模拟结果的过程模拟结果，以及通过将过程模拟结果和 结构模拟结果，通过使用过程模拟结果或结构模拟结果选择性地将合并结果扩展到扩展结果，基于合并结果或扩展结果为每个像素生成分段结果，图像的光学串扰模拟结果 基于结构仿真结果和光学网格的传感器，以及包括基于每个像素的分割结果的图像传感器的电串扰仿真结果和光学串扰仿真结果的最终仿真结果。

公开(公告)号：US20240014241A1

公开(公告)日：2024-01-11

申请号：US18331343

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook LEE ,  Seonghoon KO ,  Jaeho KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/14603

Abstract: An image sensor includes a dual vertical gate including two vertical portions apart from each other by an isolation area in a first direction and vertically extending into a substrate, a connection portion configured to connect the two vertical portions to each other on the two vertical portions, and a device isolation layer on side surfaces of the vertical portions in the first direction, wherein each of the two vertical portions includes an upper vertical portion and a lower vertical portion, a sidewall of the upper vertical portion forms a first inclination angle with a line extending in the first direction, a sidewall of the lower vertical portion forms a second inclination angle with the line extending in the first direction, and the first inclination angle is different from the second inclination angle.

公开(公告)号：US20240405041A1

公开(公告)日：2024-12-05

申请号：US18639136

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Ho KIM ,  Hyeyun PARK ,  Gijae KANG ,  Seonghoon KO ,  Jin Soak KIM ,  Wook LEE ,  Joohyun JEON ,  Guhyun KWON

IPC: H01L27/146

Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

公开(公告)号：US20230352509A1

公开(公告)日：2023-11-02

申请号：US18067393

申请日：2022-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonghoon KO ,  Jae Ho KIM ,  Uihui KWON ,  Wook LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683

Abstract: An image sensor includes a substrate including first and second pixel regions adjacent to each other, the substrate including first and second surfaces opposite to each other, a pixel isolation pattern in the substrate to define the first and second pixel regions, a transfer gate on the first surface of the substrate of the first pixel region, a floating diffusion region adjacent to a side of the transfer gate, a first ground dopant region adjacent to the first surface of the substrate in the first pixel region, and a second ground dopant region adjacent to the first surface of the substrate in the second pixel region. A bottom surface of the first ground dopant region is located at a lower level than a bottom surface of the floating diffusion region.