公开(公告)号：US20230076856A1

公开(公告)日：2023-03-09

申请号：US17899885

申请日：2022-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyok KO ,  Changsig KANG

IPC: H01L27/02

Abstract: An electrostatic discharge (ESD) device may include a semiconductor substrate including a first region, a second region, and a device isolation structure. The first region may include a first impurity region having a first conductivity type, a second impurity region having a second conductivity type opposite the first conductivity type, a first base well, and a first well in the first base well. The device isolation structure may be between the first and second impurity regions. The first base well may surround the first impurity region, the second impurity region, and lower portions of the device isolation structure in the substrate. The first well may have the first conductivity type. The first well may be spaced apart from the device isolation structure in a first direction with a portion of the first base well therebetween.

公开(公告)号：US20240105856A1

公开(公告)日：2024-03-28

申请号：US18458614

申请日：2023-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyok KO ,  Changsig KANG ,  Junhyeok KIM

IPC: H01L29/861 ,  H01L27/02 ,  H01L29/06 ,  H01L29/417

CPC classification number: H01L29/861 ,  H01L27/0255 ,  H01L27/0296 ,  H01L29/0692 ,  H01L29/417

Abstract: An electrostatic discharge (ESD) device may include a semiconductor substrate, a base well in the semiconductor substrate, a first region including a first impurity region having a first conductivity type within the base well, a second region apart from the first region in a horizontal direction in the base well and including a second impurity region having a second conductivity type a first silicide layer at least partially overlapping the first impurity region in a vertical direction on the first impurity region, and a second silicide layer on the second impurity region and apart from the first silicide layer in the horizontal direction. The second silicide layer may at least partially overlap the second impurity region in the vertical direction. The second conductivity type may be opposite the first conductivity type.