公开(公告)号：US20220328379A1

公开(公告)日：2022-10-13

申请号：US17559094

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon KWON ,  Chanwook SEO ,  Chungki MIN ,  Boun YOON

IPC: H01L23/48 ,  H01L25/065 ,  H01L25/10 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L23/528

Abstract: A semiconductor device includes a first substrate; circuit elements on the first substrate; lower interconnection lines electrically connected to the circuit elements; a second substrate on the lower interconnection lines; gate electrodes spaced apart from each other and stacked on the second substrate in a first direction that is perpendicular to an upper surface of the second substrate; channel structures penetrating through the gate electrodes, extending in the first direction, and respectively including a channel layer; through-vias extending in the first direction and electrically connecting at least one of the gate electrodes or the channel structures to the circuit elements; an insulating region surrounding side surfaces of through-vias; and a via pad between the through-vias and at least one of the lower interconnection lines in the first direction and spaced apart from the second substrate in a second direction, parallel to an upper surface of the second substrate.