公开(公告)号：US20240055469A1

公开(公告)日：2024-02-15

申请号：US18305752

申请日：2023-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Bum KIM ,  Cheon An LEE ,  Sukkang SUNG

IPC: H01L21/02 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L28/90 ,  H10B41/10 ,  H10B43/27 ,  H10B41/27 ,  H01L24/08 ,  H10B80/00 ,  H10B43/10 ,  H01L25/0657 ,  H01L2924/1438 ,  H01L2225/06544 ,  H01L2924/1431 ,  H01L2224/08145

Abstract: The present disclosure relates to a semiconductor device, and more particularly, relates to a non-volatile memory device having a three-dimensional structure. The non-volatile memory device according to an embodiment of the present disclosure includes a first chip having a peripheral circuit therein and a second chip that is stacked on the first chip and that includes memory blocks. The second chip includes a common source line that has a plate shape and extends in first and second directions, first and second dummy common source lines disposed at a same height level as the common source line, an upper insulating layer that covers the common source line and the first and second dummy common source lines, and first and second dummy contact plugs extending in a third direction and that are electrically connected to the first and second dummy common source lines, respectively, and used as electrodes of a vertical capacitor.