公开(公告)号：US20210075985A1

公开(公告)日：2021-03-11

申请号：US16950122

申请日：2020-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAE-YON LEE ,  GWI-DEOK RYAN LEE ,  MASARU ISHII ,  DONG-MO IM

IPC: H04N5/369 ,  H01L27/30 ,  G06K9/20 ,  H01L27/146 ,  G06K9/00 ,  H01L27/28 ,  H04N9/04 ,  H04N5/33

Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.