公开(公告)号：US20210134869A1

公开(公告)日：2021-05-06

申请号：US16900076

申请日：2020-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINHO JANG ,  JEONGSOON KANG ,  TAEHYOUNG KIM ,  MASARU ISHII ,  IN SUNG JOE

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern.

公开(公告)号：US20150001663A1

公开(公告)日：2015-01-01

申请号：US14315730

申请日：2014-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNGWON LEE ,  SANGCHUL SUL ,  HIROSIGE GOTO ,  SAE-YOUNG KIM ,  KANG-SU LEE ,  GWIDEOKRYAN LEE ,  MASARU ISHII

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

Abstract translation: 图像传感器包括半导体衬底，半导体衬底中的存储节点区域，半导体衬底上的绝缘部分，延伸穿过绝缘部分的通孔接触，半导体衬底中的光电转换器，并与存储节点间隔开 区域，绝缘部分上的有机光电层，以及插入在电触点和存储节点区域之间并将其电连接的缓冲器。

公开(公告)号：US20210075985A1

公开(公告)日：2021-03-11

申请号：US16950122

申请日：2020-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAE-YON LEE ,  GWI-DEOK RYAN LEE ,  MASARU ISHII ,  DONG-MO IM

IPC: H04N5/369 ,  H01L27/30 ,  G06K9/20 ,  H01L27/146 ,  G06K9/00 ,  H01L27/28 ,  H04N9/04 ,  H04N5/33

Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

公开(公告)号：US20160351630A1

公开(公告)日：2016-12-01

申请号：US15233383

申请日：2016-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  SANG CHUL SUL ,  HIROSIGE GOTO ,  SAE YOUNG KIM ,  GWI DEOK RYAN LEE ,  MASARU ISHII ,  KYO JIN CHOO

IPC: H01L27/30

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract translation: 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。