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公开(公告)号:US20180190696A1
公开(公告)日:2018-07-05
申请号:US15653537
申请日:2017-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: GWI-DEOK RYAN LEE , KWANG-MIN LEE , BEOM-SUK LEE , TAE-YON LEE
IPC: H01L27/146 , H01L27/28
CPC classification number: H01L27/14609 , H01L27/14603 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/14641 , H01L27/14645 , H01L27/14647 , H01L27/14667 , H01L27/14683 , H01L27/28 , H01L27/307
Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.
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公开(公告)号:US20210075985A1
公开(公告)日:2021-03-11
申请号:US16950122
申请日:2020-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: TAE-YON LEE , GWI-DEOK RYAN LEE , MASARU ISHII , DONG-MO IM
Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.
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公开(公告)号:US20190305022A1
公开(公告)日:2019-10-03
申请号:US16428940
申请日:2019-05-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: GWI-DEOK RYAN LEE , KWANG-MIN LEE , BEOM-SUK LEE , TAE-YON LEE
IPC: H01L27/146 , H01L27/28 , H01L27/30
Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.
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公开(公告)号:US20190260952A1
公开(公告)日:2019-08-22
申请号:US16239662
申请日:2019-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: TAE-YON LEE , Gwi-Deok Ryan Lee , Masaru Ishii , Dong-Mo Im
Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.
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公开(公告)号:US20150221702A1
公开(公告)日:2015-08-06
申请号:US14596464
申请日:2015-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JUNG-KYU JUNG , SANG-CHUL SUL , GWI-DEOK LEE , TAE-YON LEE , MYUNG-WON LEE
CPC classification number: H01L27/307 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14665 , H01L27/286
Abstract: Provided are an image sensor and an image processing device. The image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and converts a color component of incident light into a corresponding electrical signal, a transistor layer disposed on a lower surface of the semiconductor layer and including a pixel circuit that receives the electrical signal, and penetration wiring that laterally penetrates a side surface of the semiconductor layer between the upper and lower surfaces and that electrically connects the organic photoelectric conversion portion with the pixel circuit to communicate the electrical signal.
Abstract translation: 提供了图像传感器和图像处理装置。 图像传感器包括半导体层,设置在半导体层的上表面上的有机光电转换部分,并将入射光的颜色分量转换为对应的电信号,设置在半导体层的下表面上的晶体管层, 接收电信号的像素电路和横向穿透上下表面之间的半导体层的侧表面的穿透布线,并且将有机光电转换部分与像素电路电连接以传送电信号。
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