公开(公告)号：US10886289B2

公开(公告)日：2021-01-05

申请号：US15946432

申请日：2018-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-hwan Kang ,  Young-hwan Son ,  Dong-seog Eun ,  Chang-sup Lee ,  Jae-hoon Jang

IPC: H01L27/11556 ,  H01L27/11575 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first direction less than a previous one of the conductive layers to define a landing portion of the previous one of the conductive layers. An insulating plug is in one of the conductive layers under one of the landing portions, and a contact plug extends from an upper surface of the one of the landing portions.

公开(公告)号：USRE50225E1

公开(公告)日：2024-11-26

申请号：US17668441

申请日：2022-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-Hwan Kang ,  Young-Hwan Son ,  Dong-seog Eun ,  Chang-sup Lee ,  Jae-hoon Jang

IPC: H10B43/50 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first direction less than a previous one of the conductive layers to define a landing portion of the previous one of the conductive layers. An insulating plug is in one of the conductive layers under one of the landing portions, and a contact plug extends from an upper surface of the one of the landing portions.