公开(公告)号：US12302001B2

公开(公告)日：2025-05-13

申请号：US18075550

申请日：2022-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bongseok Park ,  Jinhyun Kim ,  Jongwoon Jang ,  Sungoh Kim ,  Donghyuk Ahn ,  Hyungsok Yeo ,  Taehoon Lee

IPC: H04N23/90 ,  G06F1/16 ,  H04N5/265 ,  H04N23/63 ,  H04N23/68 ,  H04N23/695 ,  H04N23/698

Abstract: An electronic device according to an embodiment may include a display; a first camera and a second camera mounted at different positions with respect to a screen of the display; a sensor; and a processor operatively connected to the sensor, the plurality of cameras, and the display, wherein the processor may be configured to acquire state information according to a change in state of the display based on a detection signal of the sensor, to control the first camera and the second camera to acquire a first image from the first camera in real time and a second image from the second camera in real time, to generate a third image by synthesizing the first image and the second image based on the state information, and to display at least a portion of the third image as a preview image on the display in real time.

公开(公告)号：US20240381618A1

公开(公告)日：2024-11-14

申请号：US18637650

申请日：2024-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin Kim ,  Myeongdong Lee ,  Seungbo Ko ,  Donghyuk Ahn

IPC: H10B12/00

Abstract: A semiconductor device includes a first contact structure on a central portion of the active pattern, a bit line structure on the first contact structure, a spacer structure on sidewalls of the bit line structure and the first contact structure and including a first spacer, a second spacer, an etch stop pattern and a third spacer sequentially stacked in a horizontal direction substantially parallel to an upper surface of the substrate, a second contact structure on an end portion of the active pattern, and a capacitor on the second contact structure. A lowermost surface of the first spacer may be lower than a lowermost surface of the second spacer, and lower surfaces of the etch stop pattern and the third spacer may be higher than the lowermost surface of the second spacer.