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公开(公告)号：US20240349491A1
公开(公告)日：2024-10-17
申请号：US18534400
申请日：2023-12-08
发明人： Myeong-Dong Lee , Jongmin Kim , Taejin Park , Seung-Bo Ko , Hui-Jung Kim
IPC分类号： H10B12/00
CPC分类号： H10B12/485 , H10B12/482 , H10B12/488
摘要： An example semiconductor memory device includes first and second active patterns, which are extended in a first direction and are disposed side by side in a second direction. Each of the first and second active patterns includes first and second edge portions, which are spaced apart from each other in the first direction. A pair of word lines are disposed to cross each of the first and second active patterns, a pair of bit lines are disposed on each of the first and second active patterns and are extended in a third direction, and a storage node contacts on the first edge portion of the first active pattern. When measured in the second direction, a first width of the storage node contact at a first level is larger than a second width at a second level. The first level is lower than the second level.
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公开(公告)号：US20230185470A1
公开(公告)日：2023-06-15
申请号：US17868147
申请日：2022-07-19
发明人： Kyungjune Cho , Jongmin Kim , Minsik Oh , Joohyeong Yoon , Keunhwan Lee , Youngjin Cho
IPC分类号： G06F3/06
CPC分类号： G06F3/064 , G06F3/0616 , G06F3/0659 , G06F3/0679
摘要： A memory system includes a memory controller and a memory device including a plurality of dies, each die including a plurality of blocks. A plurality of commands are configured to control the memory device in units of super blocks. During a first time interval, a first erase operation is performed on a first-first block among the first-first block to a first-Mth block, and a first program operation is performed on a second-first block to a second-Mth block, based on the first commands. During a second time interval, a second erase operation is performed on a first-second block among the first-first block to the first-Mth block, and a second program operation is performed on the first-first block and one or more blocks among the second-first block to the second-Mth block, based on the second commands.
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公开(公告)号：US20240324181A1
公开(公告)日：2024-09-26
申请号：US18469791
申请日：2023-09-19
发明人： Jongmin Kim , Ho-Ju Song , Myeong-Dong Lee
IPC分类号： H10B12/00 , H01L21/768 , H01L23/528
CPC分类号： H10B12/482 , H01L21/76877 , H01L23/528 , H10B12/03 , H10B12/485
摘要： A method of manufacturing a semiconductor device includes forming a buffer layer on a substrate including active regions and word lines, sequentially stacking a first conductive layer and a first insulating layer, forming bit line structure main parts such that each bit line main part is in contact with one or more of the active regions through a plurality of first contacts, by etching the first insulating layer and the first conductive layer, stacking first spacers, forming bit line structure expansions by etching the first spacers, the first insulating layer, and the first conductive layer, and forming second contacts such that the second contacts are in contact with the active regions, respectively. The bit line structure expansions are connected to the bit line structure main parts, respectively, and are wider than the bit line structure main parts as viewed in a plan view.
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公开(公告)号：US11817619B2
公开(公告)日：2023-11-14
申请号：US16953702
申请日：2020-11-20
发明人： Jongmin Kim , Yongwoog Shin , Sangho Hong , Muchang Son , Kyungtai Lee , Yanghoon Lim , Kyonghwan Cho , Joseph Kang , Jiyeon Yun , Jongsuk Kim
CPC分类号： H01Q1/243 , H04M1/0266 , H04M1/0277
摘要： An electronic device including an isolated conductor is provided. The electronic device includes a display panel including a first surface facing a first direction and a second surface facing a second direction, a first printed circuit board which is positioned in the second direction of the display panel and includes a first ground unit, a bracket including a first structure which forms a side surface of the electronic device and a second structure which forms a space in which electronic components are mounted, a wireless communication circuit which is electrically connected to the first metal region, and a second printed circuit board including a second ground unit, wherein the first structure of the bracket includes a first metal region, the second structure of the bracket includes a second metal region, a first non-metal region, and a third metal region extending through one region of the first non-metal region.
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公开(公告)号：US10211666B2
公开(公告)日：2019-02-19
申请号：US15261399
申请日：2016-09-09
发明人： Jongmin Kim , Sungrae Cho
摘要： An electronic device and method of wireless power transfer therefor are provided. The electronic device may include a frequency change circuit to produce a first signal of a frequency corresponding to at least one wireless power transfer scheme, a duty cycle change circuit to produce a second signal of a duty cycle corresponding to the at least one wireless power transfer scheme, and a control unit to control at least one of the frequency change circuit and the duty cycle change circuit according to the at least one wireless power transfer scheme. Various other embodiments are also possible.
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公开(公告)号：US20240188284A1
公开(公告)日：2024-06-06
申请号：US18371663
申请日：2023-09-22
发明人： Jongmin Kim , Chansic Yoon , Junhyeok Ahn
IPC分类号： H10B12/00
CPC分类号： H10B12/482 , H10B12/02 , H10B12/315 , H10B12/485
摘要： A semiconductor device includes a gate electrode disposed within a cell region of a substrate, each of bit line structure pairs including a first bit line structure and a second bit line structure, and extension portion pairs disposed within an interface region of the substrate, each extension portion pair including a first extension portion and a second extension portion that are connected to the first bit line structure and the second bit line structure, respectively. The bit line structure pairs are spaced apart from each other by a first distance. In each bit line structure pair, the first bit line structure and the second bit line structure are spaced apart from each other by the first distance. In each extension portion pair, the first extension portion and the second extension portion are spaced apart from each other at a second distance less than the first distance.
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公开(公告)号：US11238954B2
公开(公告)日：2022-02-01
申请号：US16998068
申请日：2020-08-20
发明人： Jongmin Kim , Yeongjin Seo , Keun-Hwan Lee
摘要： A storage device includes a plurality of nonvolatile memory devices; and a controller connected in common to the plurality of nonvolatile memory devices through data lines, the controller being configured to detect first offset information by performing a first training operation with respect to a first nonvolatile memory device from among the plurality of nonvolatile memory devices, the controller being further configured to, based on the first offset information, perform a second training operation with respect to a second nonvolatile memory device from among the plurality of nonvolatile memory devices.
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公开(公告)号：US20240338124A1
公开(公告)日：2024-10-10
申请号：US18531162
申请日：2023-12-06
发明人： Jongmin Kim , Kyungsik Um , Minsik Oh , Donggil Kang , Jinwoo Song , MyungGwan Jeong , Kyungjune Cho
CPC分类号： G06F3/0613 , G06F3/0659 , G06F3/0673 , G11C29/18
摘要： A method of operating a storage device using a host memory buffer of a host includes: recording information on HMB addresses on the host memory buffer, respectively corresponding to a plurality of read requests for the host memory buffer, in an address information table when the plurality of read requests are required; transmitting the plurality of read requests to the host memory buffer, regardless of a response of the host memory buffer; receiving a plurality of pieces of read data, respectively corresponding to the plurality of read requests, from the host memory buffer; detecting an error of each of the plurality of pieces of read data; and updating the address information table based on a result of the error detection.
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公开(公告)号：US20240224507A1
公开(公告)日：2024-07-04
申请号：US18541625
申请日：2023-12-15
发明人： Jongmin Kim , Taejin Park , Chansic Yoon , Kiseok Lee , Hongjun Lee
IPC分类号： H10B12/00 , H01L29/417 , H01L29/423
CPC分类号： H10B12/34 , H01L29/41741 , H01L29/4236 , H10B12/315
摘要： A semiconductor device includes an active pattern on a substrate, a gate structure, a conductive filling pattern and a bit line structure on the conductive filling pattern. The gate structure extends through an upper portion of the active pattern, and has an upper surface higher than an upper surface of the active pattern. The conductive filling pattern includes a lower portion on the active pattern and an upper portion thereon. The lower portion contacts an upper sidewall of the gate structure, and the upper portion has a width greater than a width of the lower portion.
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公开(公告)号：US11754517B2
公开(公告)日：2023-09-12
申请号：US17175173
申请日：2021-02-12
发明人： Suyoung Lee , Jongmin Kim , Ilsuk Park , Kwangil Shin , Chungsam Jun
IPC分类号： G06K9/00 , G01N23/225 , G01N23/221 , G06T7/00
CPC分类号： G01N23/225 , G01N23/221 , G06T7/001 , G01N2223/401 , G01N2223/6116 , G01N2223/6462 , G06T2207/30148
摘要： An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.
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