公开(公告)号：US20140106537A1

公开(公告)日：2014-04-17

申请号：US14053913

申请日：2013-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hwan KIM ,  Sunggil KIM ,  HungSuk KIM ,  Guk-Hyon YON ,  Hunhyeong LIM

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/28273 ,  H01L21/32155 ,  H01L21/764 ,  H01L27/11524

Abstract: Methods of manufacturing a semiconductor device are provided. The method includes forming a poly-silicon layer doped with first p-type dopants on a substrate, etching the poly-silicon layer and the substrate to form a poly-silicon pattern and a trench, forming device isolation pattern covering a lower sidewall of the poly-silicon pattern in the trench, thermally treating the poly-silicon pattern in a gas including second p-type dopants, forming a dielectric layer and a conductive layer on the thermally treated poly-silicon pattern and the device isolation pattern, etching the conductive layer, the dielectric layer, and the thermally treated poly-silicon pattern to form a control gate, a dielectric pattern, and a floating gate respectively.

Abstract translation: 提供制造半导体器件的方法。 该方法包括在衬底上形成掺杂有第一p型掺杂剂的多晶硅层，蚀刻多晶硅层和衬底以形成多晶硅图案和沟槽，从而形成覆盖层的下侧壁的器件隔离图案 沟槽中的多晶硅图案，在包括第二p型掺杂剂的气体中热处理多晶硅图案，在热处理的多晶硅图案和器件隔离图案上形成电介质层和导电层，蚀刻导电 层，电介质层和热处理的多晶硅图案，以分别形成控制栅极，电介质图案和浮置栅极。

公开(公告)号：US20200216953A1

公开(公告)日：2020-07-09

申请号：US16522372

申请日：2019-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yub IE ,  Guk-Hyon YON ,  Jung-Geun JEE

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/24 ,  C23C16/52 ,  C23C16/48

Abstract: An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.