公开(公告)号：US20240303824A1

公开(公告)日：2024-09-12

申请号：US18594453

申请日：2024-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeok LEE ,  Jaewon YANG ,  Gun HUH

IPC: G06T7/12 ,  G06T7/00 ,  G06T7/143

CPC classification number: G06T7/12 ,  G06T7/0004 ,  G06T7/143 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: Provided is a contour probability prediction method of probabilistically predicting a contour, the contour probability prediction method including acquiring a plurality of contour images for an image of a wafer on which a process has been performed according to a design image, calculating a contour average and a contour standard deviation from the plurality of contour images, generating a probability distribution image calculated with a predetermined probability distribution, on the basis of the contour average and the contour standard deviation, and deep-learning-training a probability prediction model by inputting the design image and the probability distribution image into the probability prediction model.

公开(公告)号：US20130219349A1

公开(公告)日：2013-08-22

申请号：US13626370

申请日：2012-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： WonChan LEE ,  Seong-Bo SHIM ,  Sunghoon JANG ,  Gun HUH

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method for process proximity correction may include obtaining a point spread function (PSF) from test patterns, the test patterns including an etching process performed thereon, generating a target layout with polygonal patterns, dividing the target layout into grid cells, generating a density map including long-range layout densities, each of the long-range layout densities being obtained from the polygonal patterns located within a corresponding one of the grid cells, performing a convolution of the long-range layout densities with the PSF to obtain long-range etch skews for the grid cells, and generating an etch bias model including short-range etch skews and the long-range etch skews, each of the short-range etch skews being obtained from a neighboring region of a target pattern selected from the polygonal patterns in each of the grid cells.

Abstract translation: 用于过程接近校正的方法可以包括从测试图案获得点扩散函数（PSF），测试图案包括在其上执行的蚀刻处理，生成具有多边形图案的目标布局，将目标布局划分成网格单元，生成密度图 包括长距离布局密度，每个长距离布局密度都是从位于相应的一个网格单元内的多边形图案获得的，执行长距离布局密度与PSF的卷积以获得长距离蚀刻 并且产生包括短距离蚀刻偏斜和远距离蚀刻偏斜的蚀刻偏置模型，每个短距离蚀刻偏斜是从选自多边形图案中的目标图案的相邻区域获得的 每个网格单元格。