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公开(公告)号：US20230281792A1
公开(公告)日：2023-09-07
申请号：US18060260
申请日：2022-11-30
发明人： Sooryong LEE , Jaewon YANG , Kyoung Cho NA , Jihong KIM , Sang Chul YEO , Hyeok LEE
IPC分类号： G06T7/00 , G06T11/00 , G06T3/40 , G06F30/392
CPC分类号： G06T7/001 , G06T11/00 , G06T3/40 , G06F30/392 , G06T2207/30148 , G06T2207/20081
摘要： Disclosed is an operating method of an electronic device which includes a processor executing a semiconductor layout simulation module based on machine learning. The operating method includes receiving, at the semiconductor layout simulation module executed by the processor, a layout image, inferring a wafer image based on the layout image and a fabrication device information image of a semiconductor fabrication device fabricating a semiconductor integrated circuit based on a final layout image, adjusting the layout image when the wafer image is not acceptable, and confirming the layout image as the final layout image when the wafer image is acceptable.
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公开(公告)号：US20230280646A1
公开(公告)日：2023-09-07
申请号：US17972231
申请日：2022-10-24
发明人： Kyungsoo KIM , Sooryong LEE , Jaewon YANG , Sangchul YEO , Hyeok LEE
摘要： The inventive concept provides a corner rounding method of a deep learning-based optical proximity correction (OPC) pattern by which patterning reliability may be ensured, and an OPC method and a mask manufacturing including the corner rounding method. The corner rounding method of a deep learning-based OPC pattern includes: obtaining a contour of a photoresist (PR) pattern or an etching pattern on a wafer; obtaining a square layout of the PR pattern or the etching pattern corresponding to the contour; generating a transform model through deep learning with the square layout and the contour; and obtaining a rounded layout target with respect to a square layout target by using the transform model.
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公开(公告)号：US20230197460A1
公开(公告)日：2023-06-22
申请号：US18072998
申请日：2022-12-01
发明人： Jaewon YANG , Seongjin PARK , Sangchul YEO , Seonmin RHEE , Hyeok LEE , Sooryong LEE , Seungju HAN
IPC分类号： H01L21/308 , G06T3/40 , G06V10/46 , G06V10/82 , G03F7/20
CPC分类号： H01L21/308 , G03F7/70616 , G06T3/4007 , G06V10/46 , G06V10/82
摘要： A semiconductor device patterning method includes generating an input image by imaging information about a pattern of a sample, acquiring an output image of the pattern of the sample after a preset semiconductor process with respect to the sample, generating a predictive model through learning using a Deep Neural Network (DNN) with the input image and the output image, and predicting a pattern image after the semiconductor process for a pattern of a semiconductor device by using the predictive model.
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公开(公告)号：US20240303824A1
公开(公告)日：2024-09-12
申请号：US18594453
申请日：2024-03-04
发明人： Hyeok LEE , Jaewon YANG , Gun HUH
CPC分类号： G06T7/12 , G06T7/0004 , G06T7/143 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： Provided is a contour probability prediction method of probabilistically predicting a contour, the contour probability prediction method including acquiring a plurality of contour images for an image of a wafer on which a process has been performed according to a design image, calculating a contour average and a contour standard deviation from the plurality of contour images, generating a probability distribution image calculated with a predetermined probability distribution, on the basis of the contour average and the contour standard deviation, and deep-learning-training a probability prediction model by inputting the design image and the probability distribution image into the probability prediction model.
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公开(公告)号：US20240168372A1
公开(公告)日：2024-05-23
申请号：US18518551
申请日：2023-11-23
发明人： Deokyoung KANG , Youngchul KWAK , Serim RYOU , Seong-Jin PARK , Seon Min RHEE , Jaewon YANG , Eunju KIM , Hyeok LEE
CPC分类号： G03F1/72 , G06T7/564 , G06T2207/10032 , G06T2207/10061 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： A method and apparatus for estimating a resist image (RI) are disclosed. The method includes obtaining an aerial image (AI) and a first RI from a mask image (MI), obtaining a second RI from the AI, and obtaining a third RI based on the first RI and the second RI.
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