公开(公告)号：US20190057966A1

公开(公告)日：2019-02-21

申请号：US15869227

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： HONG-SHIK SHIN ,  TAE-GON KIM ,  YUICHIRO SASAKI

IPC: H01L27/092 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L29/167 ,  H01L29/06 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/66 ,  H01L21/265 ,  H01L21/266

Abstract: A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).