公开(公告)号：US11699375B1

公开(公告)日：2023-07-11

申请号：US17968407

申请日：2022-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiroki Fujii ,  Jae-Hyun Yoo

IPC: G09G3/20 ,  H01L29/10

CPC classification number: G09G3/20 ,  H01L29/1041 ,  G09G2310/0291

Abstract: A semiconductor device includes a semiconductor substrate including an active region defined in a well impurity layer having a first conductivity type, a gate electrode on the active region, and a gate insulating layer between the gate electrode and the active region. The active region includes a source region and a drain region at sides of the gate electrode, the source region and the drain region having a second conductivity type, a channel region between the source and drain regions, the channel region having the first conductivity type, a first halo region in contact with the source region and a second halo region in contact with the drain region, the first halo region and the second halo region having the first conductivity type, and a slit well region between the first and second halo regions, the slit well region having the first conductivity type.

公开(公告)号：US11908807B2

公开(公告)日：2024-02-20

申请号：US17574212

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Huichul Shin ,  Hyungjin Lee ,  Jinhong Park ,  Mingeun Song ,  Euiyoung Jeong ,  Hiroki Fujii

IPC: H01L23/552 ,  H01L21/82 ,  H01L21/78

CPC classification number: H01L23/552

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.