公开(公告)号：US20190198373A1

公开(公告)日：2019-06-27

申请号：US16031321

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seul Ha MYUNG ,  Min Joon PARK ,  Hyo Sung KIM ,  Kyung Hoon LEE ,  Jae Hyun LEE

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/32 ,  H05H1/00

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J37/32697 ,  H01L21/3065 ,  H05H1/0081

Abstract: A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.