公开(公告)号：US20220059530A1

公开(公告)日：2022-02-24

申请号：US17405606

申请日：2021-08-18

申请人： Samsung Electronics Co., Ltd.

发明人： Seong-Ho SONG ,  Jong Han LEE ,  Jong Ha PARK ,  Jae Hyun LEE ,  Jong Hoon BAEK ,  Da Bok JEONG

IPC分类号： H01L27/088 ,  H01L21/8234

摘要： A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

公开(公告)号：US20190198373A1

公开(公告)日：2019-06-27

申请号：US16031321

申请日：2018-07-10

申请人： Samsung Electronics Co., Ltd.

发明人： Seul Ha MYUNG ,  Min Joon PARK ,  Hyo Sung KIM ,  Kyung Hoon LEE ,  Jae Hyun LEE

IPC分类号： H01L21/683 ,  H01L21/3065 ,  H01J37/32 ,  H05H1/00

CPC分类号： H01L21/6833 ,  H01J37/32082 ,  H01J37/32697 ,  H01L21/3065 ,  H05H1/0081

摘要： A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.

公开(公告)号：US20240321876A1

公开(公告)日：2024-09-26

申请号：US18736793

申请日：2024-06-07

申请人： Samsung Electronics Co., Ltd.

发明人： Seong-Ho SONG ,  Jong Han LEE ,  Jong Ha PARK ,  Jae Hyun LEE ,  Jong Hoon BAEK ,  Da Bok JEONG

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823456 ,  H01L27/0886

摘要： A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

公开(公告)号：US20180031303A1

公开(公告)日：2018-02-01

申请号：US15726007

申请日：2017-10-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byoung Mok KIM ,  Yong Man SEO ,  Young Jae SONG ,  Jae Hyun LEE

IPC分类号： F25D23/02 ,  F25D23/08

CPC分类号： F25D23/028 ,  F25D23/02 ,  F25D23/025 ,  F25D23/087 ,  F25D2323/021

摘要： A refrigerator includes a storage compartment, an inner door including an opening having a size corresponding to the size of the storage compartment, a plurality of door guards disposed in the opening, and an outer door that opens or closes the opening, wherein the inner door includes inner sidewalls that are disposed at both sides of the opening and are flat from an inlet of the opening to an outlet of the opening without any curve.

公开(公告)号：US20190305099A1

公开(公告)日：2019-10-03

申请号：US16178159

申请日：2018-11-01

申请人： Samsung Electronics Co., Ltd.

发明人： Min Seok JO ,  Jae Hyun LEE ,  Jong Han LEE ,  Hong Bae PARK

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/762

摘要： A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the gate insulation support.