公开(公告)号：US09287349B2

公开(公告)日：2016-03-15

申请号：US13688840

申请日：2012-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyong-Soo Kim ,  Byoung-Yong Gwak ,  Kukhan Yoon

IPC: H01L49/02 ,  H01L27/108 ,  H01L43/12 ,  H01L29/02

CPC classification number: H01L28/60 ,  H01L27/10805 ,  H01L27/10852 ,  H01L28/91

Abstract: According to example embodiments of inventive concepts, method of forming a semiconductor memory devices includes sequentially forming a first mold layer, a first support layer, a second mold layer, and a second support layer on a substrate, forming lower electrodes penetrating the second support layer, the second mold layer, the first support layer, and the first mold layer on the substrate, patterning the second support layer to form a second support pattern including an opening, removing the second mold layer to expose portions of sidewalls of the lower electrodes, and etching the exposed sidewalls of the lower electrodes.

Abstract translation: 根据本发明构思的示例性实施例，形成半导体存储器件的方法包括在衬底上顺序地形成第一模具层，第一支撑层，第二模具层和第二支撑层，形成穿透第二支撑层的下部电极 第二模具层，第一支撑层和第一模具层，图案化第二支撑层以形成包括开口的第二支撑图案，去除第二模具层以暴露下部电极的侧壁部分， 并蚀刻下电极的暴露的侧壁。