公开(公告)号：US20230253320A1

公开(公告)日：2023-08-10

申请号：US18297852

申请日：2023-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon Kim ,  Kyung-Eun Byun ,  Hyunijae Song ,  Keunwook Shin ,  Eunkyu Lee ,  Changseok Lee ,  Yeonchoo Cho ,  Taejin Choi

IPC: H01L23/528 ,  H10B53/30

CPC classification number: H01L23/5283 ,  H10B53/30

Abstract: An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of the rest region of the semiconductor layer, a metal layer facing the semiconductor layer, a semi-metal layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the semi-metal layer and the semiconductor and covering the first region.