公开(公告)号：US20210334444A1

公开(公告)日：2021-10-28

申请号：US17112048

申请日：2020-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sooyong LEE ,  Jeeyong LEE ,  Jaeho JEONG

IPC: G06F30/392 ,  G06N20/00 ,  G06N5/04 ,  G03F7/20

Abstract: Disclosed is a method for fabricating of a semiconductor device. The method includes receiving a first layout including patterns for the fabrication of the semiconductor device, performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout to generate a second layout, and performing optical proximity correction (OPC) on the second layout to generate a third layout.

公开(公告)号：US20240020450A1

公开(公告)日：2024-01-18

申请号：US18360209

申请日：2023-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sooyong LEE ,  Jeeyong LEE ,  Jaeho JEONG

IPC: G06F30/392 ,  G06N20/00 ,  G03F7/00 ,  G06N5/04

CPC classification number: G06F30/392 ,  G06N20/00 ,  G03F7/70441 ,  G06N5/04 ,  G06F2119/18

Abstract: Disclosed is a method for fabricating of a semiconductor device. The method includes receiving a first layout including patterns for the fabrication of the semiconductor device, performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout to generate a second layout, and performing optical proximity correction (OPC) on the second layout to generate a third layout.

公开(公告)号：US20170148748A1

公开(公告)日：2017-05-25

申请号：US15352890

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho JEONG ,  Sunyoung Kim ,  Jang-Gn Yun ,  Hoosung Cho ,  Sunghoi Hur

IPC: H01L23/00 ,  H01L23/544 ,  H01L23/528 ,  H01L27/115 ,  H01L23/522

Abstract: Three-dimensional (3D) semiconductor devices may be provided. A 3D semiconductor device may include a substrate including a chip region and a scribe line region, a cell array structure including memory cells three-dimensionally arranged on the chip region of the substrate, a stack structure disposed on the scribe line region of the substrate and including first layers and second layers that are vertically and alternately stacked, and a plurality of vertical structures extending along a vertical direction that is perpendicular to a top surface of the substrate and penetrating the stack structure.