公开(公告)号：US09564234B2

公开(公告)日：2017-02-07

申请号：US14186474

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： DongHun Kwak ,  Kitae Park ,  JinMan Han

IPC: G11C16/00 ,  G11C16/26 ,  G11C16/04 ,  G11C16/24

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/24

Abstract: Systems and methods of sequentially accessing memory cells in a nonvolatile memory device (NVM) are provided. The NVM has a plurality of strings and a common signal line coupled to the plurality of strings. Each string includes a plurality of memory cells and a selection transistor coupled between the plurality of memory cells and the common signal line. A command that accesses multiple memory cells is received, a voltage is applied to a first selection transistor of a first string to electrically connect the common signal line to the first string, a pulse is applied for a predetermined time period to selection transistors of other strings, and memory cells of the first string are accessed. Advantages such as removal of boosting charges from unselected strings prior to sequentially accessing memory cells from selected strings can improve performance and reliability of NVM-based systems.

Abstract translation: 提供了在非易失性存储器件（NVM）中顺序访问存储器单元的系统和方法。 NVM具有耦合到多个串的多个串和公共信号线。 每个串包括耦合在多个存储单元和公共信号线之间的多个存储单元和选择晶体管。 接收访问多个存储单元的命令，将电压施加到第一串的第一选择晶体管，以将公共信号线电连接到第一串，将脉冲施加预定时间段以选择其他串的晶体管 ，并且访问第一串的存储单元。 在从所选字符串顺序访问存储器单元之前，诸如从未选择的串去除升压电荷的优点可以提高基于NVM的系统的性能和可靠性。