Abstract:
A semiconductor package includes a first redistribution wiring layer having first and second surfaces opposite to each other, the first redistribution wiring layer including a plurality of first redistribution wires and a plurality of landing pads electrically connected to the first redistribution wires, the plurality of landing pads exposed from the second surface, a second redistribution wiring layer disposed on the first surface of the first redistribution wiring layer, the second redistribution wiring layer including an insulating layer, a logic semiconductor chip provided in the insulating layer, second redistribution wires electrically connected to the logic semiconductor chip, and third redistribution wires electrically connected to the first redistribution wires, the third redistribution wires extending to penetrate the insulating layer, a third redistribution wiring layer disposed on the second redistribution wiring layer, the third redistribution wiring layer including fourth redistribution wires electrically connected to the third redistribution wires, and a semiconductor substrate disposed on an upper surface of the third redistribution wire layer, the semiconductor substrate including at least one memory semiconductor chip electrically connected to the fourth redistribution wires.
Abstract:
A rack assembly of a dish washer is disclosed. A rack assembly of a dish washer according to an embodiment of the disclosure includes a frame including a plurality of wires separately arranged on a bottom surface configured to house cutlery, and a plurality of tine blocks detachable from the plurality of wires, each of the plurality of tine blocks respectively includes a holding surface supporting the cutlery, and a plurality of tines formed on the holding surface, wherein the plurality of tine blocks include a first time block including a plurality of first tines separately arranged by a first interval in a first direction, and a second tine block including a plurality of tines separately arranged by a second interval narrower than the first interval in the first direction.
Abstract:
Provided herein is a lithium battery including: a cathode including a cathode active material; an anode including an anode active material; an electrolyte between the cathode and the anode; and a separator impregnated with the electrolyte, wherein the separator includes carboxyl group-containing microbial cellulose nanofibers, and wherein a differential scanning calorimetry (DSC) thermogram of the separator evinces an exothermic reaction peak, represented by a differential value (dH/dT), at a temperature in a range of about 150° C. to about 200° C.
Abstract:
An electronic device includes: a side bezel structure including a first body surrounding an inner space of the device, and a second body extending from the first body into the inner space and including a through hole; a plate including a support portion within the inner space; a protrusion portion extending from the support portion into the through hole, the protrusion portion being coupling to the second body and corresponding to the through hole; and a conductive adhesive member coupling the through hole and the protrusion portion, which is disposed between the through hole and the protrusion portion. An area of the protrusion portion contacting one surface of the second body toward the support portion is narrower than an area of the protrusion portion contacting another surface of the second body.
Abstract:
A porous film, a separator including the porous film, an electrochemical device including the porous film, and a method of preparing the porous film are provided, wherein the porous film includes: small-diameter fibers having an average diameter of about 50 nm or less; and large-diameter fibers having an average diameter of about 100 nm or greater, wherein an amount of the large-diameter fibers is about 5 wt % to about 60 wt % based on a total weight of the small-diameter fibers and the large-diameter fibers.
Abstract:
A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.
Abstract:
A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.
Abstract:
Provided is a liposome comprising a lipid bilayer and a sonosensitizer that is disposed in and/or on the lipid bilayer, wherein the sonosensitizer self-assembles to form aggregates when exposed to ultrasound; and a method of efficiently delivering an active agent to a target site in the body of a subject using the sonosensitive liposome.
Abstract:
A non-volatile memory device includes a sensing mode selector configured to select a sensing mode according to environment information. A page buffer senses a data state of a memory cell in one of a plurality of sensing methods, depending upon the selected sensing mode. Memory device operations include high speed program operations, high speed verify operations, high reliability accurate program operations, and high reliability accurate verify operations.
Abstract:
The present disclosure relates to semiconductor devices and semiconductor packages. One example semiconductor device includes a crystalline silicon layer, an amorphous silicon layer on the crystalline silicon layer and extending along a first surface of the crystalline silicon layer, and a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer. The dielectric layer includes silicon oxynitride and has compressive stress.