公开(公告)号：US10991825B2

公开(公告)日：2021-04-27

申请号：US16167815

申请日：2018-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Kim ,  Jong Chui Park ,  Kye Hyun Baek

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a plurality of fins protruding therefrom. The plurality of fins includes a plurality of active fins and at least one non-active fin disposed between ones of the plurality of active fins. The device also includes at least one gate electrode crossing at least a portion of the active fins. The device further includes a plurality of source/drain regions disposed on the active fins adjacent the at least one gate electrode and separated from one another by the at least one non-active fin.