公开(公告)号：US11747556B2

公开(公告)日：2023-09-05

申请号：US17706443

申请日：2022-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hye Kim ,  Keun-yeong Cho ,  Ho-chul Ji

IPC: G02B6/12 ,  G02B6/124

CPC classification number: G02B6/12004 ,  G02B6/124 ,  G02B2006/12061 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12123

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

公开(公告)号：US20220221646A1

公开(公告)日：2022-07-14

申请号：US17706443

申请日：2022-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hye Kim ,  Keun-yeong Cho ,  Ho-chul Ji

IPC: G02B6/12 ,  G02B6/124

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

公开(公告)号：US11287570B2

公开(公告)日：2022-03-29

申请号：US16565076

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hye Kim ,  Keun-yeong Cho ,  Ho-chul Ji

IPC: G02B6/12 ,  G02B6/124

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.